公开(公告)号：US20120295407A1

公开(公告)日：2012-11-22

申请号：US13564082

申请日：2012-08-01

申请人： Byung-wook YOO ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

发明人： Byung-wook YOO ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

IPC分类号： H01L21/336

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66765

摘要： A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

摘要翻译： 提供薄膜晶体管（TFT）及其制造方法，TFT在栅极上包括栅极绝缘层。 可以在对应于栅极的栅极绝缘层的一部分上形成沟道。 可以在通道的表面上形成金属材料。 金属材料使通道结晶。 源极和漏极可以接触通道的侧表面。

公开(公告)号：US20100051942A1

公开(公告)日：2010-03-04

申请号：US12615315

申请日：2009-11-10

申请人： Myung-kwan RYU ,  Jun-seong KIM ,  Sang-yoon LEE ,  Euk-che HWANG ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

发明人： Myung-kwan RYU ,  Jun-seong KIM ,  Sang-yoon LEE ,  Euk-che HWANG ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

IPC分类号： H01L29/227

CPC分类号： H01L29/7869

摘要： A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

摘要翻译： 这里提供了一种ZnO基薄膜晶体管（TFT），以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层，其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的，具体地形成在沟道层表面附近的区域。 由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解，因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯（Cl）。

公开(公告)号：US20080283831A1

公开(公告)日：2008-11-20

申请号：US11960567

申请日：2007-12-19

申请人： Myung-kwan RYU ,  Jun-seong KIM ,  Sang-yoon LEE ,  Euk-che HWANG ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

发明人： Myung-kwan RYU ,  Jun-seong KIM ,  Sang-yoon LEE ,  Euk-che HWANG ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

IPC分类号： H01L29/227 ,  H01L21/34

CPC分类号： H01L29/7869

摘要： A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

摘要翻译： 这里提供了一种ZnO基薄膜晶体管（TFT），以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层，其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的，具体地形成在沟道层表面附近的区域。 由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解，因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯（Cl）。

公开(公告)号：US20080299702A1

公开(公告)日：2008-12-04

申请号：US12110744

申请日：2008-04-28

申请人： Kyoung-seok SON ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Ji-sim JUNG

发明人： Kyoung-seok SON ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Ji-sim JUNG

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/7869

摘要： A ZnO-based thin film transistor (TFT) is provided herein. Also provided is a method for manufacturing the TFT. The ZnO-based TFT is very sensitive to the oxygen concentration present in a channel layer. In order to prevent damage to a channel layer of a bottom gate TFT, and to avoid a deep negative threshold voltage resulting from damage to the channel layer, the method for manufacturing the ZnO-based TFT comprises formation of an etch stop layer or a passivation layer comprising unstable or incompletely bonded oxygen, and annealing the layers to induce an interfacial reaction between the oxide layer and the channel layer and to reduce the carrier concentration.

摘要翻译： 本文提供了一种ZnO基薄膜晶体管（TFT）。 还提供了一种用于制造TFT的方法。 ZnO基TFT对通道层中存在的氧浓度非常敏感。 为了防止对底栅TFT的沟道层的损坏，并且为了避免由于对沟道层的损坏而产生的深负阈值电压，制造ZnO基TFT的方法包括形成蚀刻停止层或钝化层 层，其包含不稳定或不完全结合的氧，并且退火层以在氧化物层和沟道层之间引起界面反应并降低载流子浓度。

公开(公告)号：US20080116457A1

公开(公告)日：2008-05-22

申请号：US11877308

申请日：2007-10-23

申请人： Kyung-bae PARK ,  Jang-yeon KWON ,  Sang-yoon LEE ,  Ji-sim JUNG

发明人： Kyung-bae PARK ,  Jang-yeon KWON ,  Sang-yoon LEE ,  Ji-sim JUNG

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L27/1251 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78696

摘要： Provided are a driving device for a unit pixel of an organic light emitting display having an improved structure and a method of manufacturing the same.

摘要翻译： 提供了一种具有改进结构的有机发光显示器的单位像素的驱动装置及其制造方法。

公开(公告)号：US20080153214A1

公开(公告)日：2008-06-26

申请号：US11958719

申请日：2007-12-18

申请人： Ji-sim JUNG ,  Jung-seok HAHN ,  Sang-yoon LEE ,  Jong-man KIM ,  Jang-yeon KWON ,  Kyung-bae PARK

发明人： Ji-sim JUNG ,  Jung-seok HAHN ,  Sang-yoon LEE ,  Jong-man KIM ,  Jang-yeon KWON ,  Kyung-bae PARK

IPC分类号： H01L21/336

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02595 ,  H01L27/1229 ,  H01L27/1277 ,  H01L27/3262

摘要： Provided is a method of manufacturing a driving-device for a unit pixel of an organic light emitting display having an improved manufacturing process in which the driving device can be manufactured with a smaller number of processes and in simpler processes. The method includes: forming an amorphous silicon layer including a first amorphous region and a second amorphous region disposed on the same plane of a substrate; forming an SAM (self-assembled monolayer) having a hydrophobic property on the first amorphous region; coating an aqueous solution in which nickel particles are dispersed, on the second amorphous region and the SAM, wherein a larger amount of nickel particles than on the SAM are dispersed on the second amorphous region using a hydrophilicity difference between the second amorphous region and the SAM; vaporizing the SAM through an annealing process and simultaneously performing metal induced crystallization in which the nanoparticles are used as a medium, to crystallize the first and second amorphous regions and to form first and second crystallization regions; patterning the first and second crystallization regions to form first and second channel regions; and forming first and second electrodes on the first and second channel regions.

摘要翻译： 提供一种制造有机发光显示器的单位像素的驱动装置的方法，该有机发光显示器具有改进的制造工艺，其中驱动装置可以以较少的工艺和更简单的工艺制造。 该方法包括：形成包括设置在基板的同一平面上的第一非晶区和第二非晶区的非晶硅层; 在第一非晶区上形成具有疏水性的SAM（自组装单层）; 在所述第二非晶区域和所述SAM上涂覆其中分散有镍颗粒的水溶液，其中比所述SAM上更大量的所述镍颗粒分散在所述第二非晶区域上，使用所述第二非晶区域和所述SAM之间的亲水性差异 ; 通过退火工艺蒸发SAM，同时进行金属诱导结晶，其中纳米颗粒用作介质，使第一和第二非晶区域结晶并形成第一和第二结晶区域; 图案化第一和第二结晶区域以形成第一和第二通道区域; 以及在所述第一和第二通道区域上形成第一和第二电极。

公开(公告)号：US20120028422A1

公开(公告)日：2012-02-02

申请号：US13267145

申请日：2011-10-06

申请人： Jang-yeon KWON ,  Sang-yoon LEE ,  Jong-man KIM ,  Kyung-bae PARK ,  Ji-sim JUNG

发明人： Jang-yeon KWON ,  Sang-yoon LEE ,  Jong-man KIM ,  Kyung-bae PARK ,  Ji-sim JUNG

IPC分类号： H01L21/336

CPC分类号： H01L29/78603 ,  H01L29/78645

摘要： A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.

摘要翻译： 薄膜晶体管（“TFT”）包括形成在柔性基板上的多晶硅层，其包括源极区，漏极区和沟道区，以及形成在多晶硅层的沟道区上的栅叠层，其中 栅极堆叠包括第一和第二栅极堆叠，并且第一和第二栅极堆叠之间的多晶硅层的区域是偏移区域。 还提供了制造TFT的方法。

公开(公告)号：US20080067520A1

公开(公告)日：2008-03-20

申请号：US11856251

申请日：2007-09-17

申请人： Ji-sim JUNG ,  Jong-man KIM ,  Jang-yeon KWON ,  Kyung-bae PARK

发明人： Ji-sim JUNG ,  Jong-man KIM ,  Jang-yeon KWON ,  Kyung-bae PARK

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L27/1277 ,  H01L27/3244

摘要： An organic electro-luminescent display and a method of fabricating the same include an organic light emitting diode, a driving transistor which drives the organic light emitting diode, and a switching transistor which controls an operation of the driving transistor, wherein active layers of the switching and driving transistors are crystallized using silicides having different densities such that the active layer of the driving transistor has a larger grain size than the active layer of the switching layer.

摘要翻译： 有机电致发光显示器及其制造方法包括有机发光二极管，驱动有机发光二极管的驱动晶体管和控制驱动晶体管的操作的开关晶体管，其中开关的有源层 并且使用具有不同密度的硅化物使驱动晶体管结晶，使得驱动晶体管的有源层具有比开关层的有源层更大的晶粒尺寸。

公开(公告)号：US20080145981A1

公开(公告)日：2008-06-19

申请号：US11876650

申请日：2007-10-22

申请人： Jong-man KIM ,  Kyung-bae PARK ,  Jang-yeon KWON ,  Ji sim JUNG

发明人： Jong-man KIM ,  Kyung-bae PARK ,  Jang-yeon KWON ,  Ji sim JUNG

IPC分类号： H01L21/84

CPC分类号： H01L29/78621 ,  H01L29/66757

摘要： Provided is a method of manufacturing a thin film transistor, the method comprising: forming an amorphous silicon layer on a substrate; forming a polysilicon layer by crystallizing the amorphous silicon layer; forming a mask structure that masks a portion of the polysilicon; forming a source and a drain region and a channel region interposed between the source and the drain regions in the polysilicon layer; injecting impurities having a first concentration using an ion beam implantation into one end and the other end of the polysilicon layer which are not covered by the mask structure. The ends of the polysilicon layer with the mask thereon is then subjected to ion bombardment to increase the level of impurities in the source and drain regions while at the same time shrinking the size of the masked regions.

摘要翻译： 提供一种制造薄膜晶体管的方法，该方法包括：在衬底上形成非晶硅层; 通过使非晶硅层结晶而形成多晶硅层; 形成掩模所述多晶硅的一部分的掩模结构; 在所述多晶硅层中形成源极和漏极区域以及介于所述源极和漏极区域之间的沟道区域; 使用离子束注入将具有第一浓度的杂质注入未被掩模结构覆盖的多晶硅层的一端和另一端。 然后对其上具有掩模的多晶硅层的端部进行离子轰击以增加源极和漏极区域中的杂质的水平，同时缩小掩模区域的尺寸。

公开(公告)号：US20100301324A1

公开(公告)日：2010-12-02

申请号：US12855807

申请日：2010-08-13

申请人： Ji-sim JUNG ,  Jong-man KIM ,  Jang-yeon KWON ,  Kyung-bae PARK

发明人： Ji-sim JUNG ,  Jong-man KIM ,  Jang-yeon KWON ,  Kyung-bae PARK

IPC分类号： H01L51/50 ,  H01L33/00

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L27/1277 ,  H01L27/3244

摘要： An organic electro-luminescent display and a method of fabricating the same include an organic light emitting diode, a driving transistor which drives the organic light emitting diode, and a switching transistor which controls an operation of the driving transistor, wherein active layers of the switching and driving transistors are crystallized using silicides having different densities such that the active layer of the driving transistor has a larger grain size than the active layer of the switching layer.

摘要翻译： 有机电致发光显示器及其制造方法包括有机发光二极管，驱动有机发光二极管的驱动晶体管和控制驱动晶体管的操作的开关晶体管，其中开关的有源层 并且使用具有不同密度的硅化物使驱动晶体管结晶，使得驱动晶体管的有源层具有比开关层的有源层更大的晶粒尺寸。