发明申请
- 专利标题： ESD/ANTENNA DIODES FOR THROUGH-SILICON VIAS
- 专利标题（中）： ESD /天线二极管
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申请号： US13567922申请日： 2012-08-06
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公开(公告)号： US20120295433A1公开(公告)日： 2012-11-22
- 发明人: Qing Su , Min Ni , Zongwu Tang , Jamil Kawa , James D. Sproch
- 申请人： Qing Su , Min Ni , Zongwu Tang , Jamil Kawa , James D. Sproch
- 申请人地址： US CA Mountain View
- 专利权人： SYNOPSYS, INC.
- 当前专利权人： SYNOPSYS, INC.
- 当前专利权人地址： US CA Mountain View
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
Roughly described, an antenna diode is formed at least partially within the exclusion zone around a TSV, and is connected to the TSV by way of a metal 1 layer conductor at the same time that the TSV is connected to either the gate poly or a diffusion region of one or more transistors placed outside the exclusion zone.
公开/授权文献
- US08877638B2 ESD/antenna diodes for through-silicon vias 公开/授权日：2014-11-04
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