发明申请
- 专利标题: SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件
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申请号: US13569939申请日: 2012-08-08
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公开(公告)号: US20120299057A1公开(公告)日: 2012-11-29
- 发明人: Tsuyoshi Takahashi
- 申请人: Tsuyoshi Takahashi
- 申请人地址: JP Kawasaki-shi
- 专利权人: FUJITSU LIMITED
- 当前专利权人: FUJITSU LIMITED
- 当前专利权人地址: JP Kawasaki-shi
- 优先权: JP2009-078548 20090327; JP2009-188320 20090817
- 主分类号: H01L29/12
- IPC分类号: H01L29/12
摘要:
A semiconductor device includes a p-type semiconductor layer and an n-type semiconductor layer that are joined by sandwiching a depletion layer with a thickness that allows transmission of a plurality of electrons and holes by direct-tunneling.
公开/授权文献
- US08306495B1 Semiconductor device 公开/授权日:2012-11-06