公开(公告)号：US09295489B2

公开(公告)日：2016-03-29

申请号：US13144139

申请日：2010-01-20

申请人： Kiyokazu Nakajima ,  Toshirou Nishida ,  Tsuyoshi Takahashi ,  Yoshihito Souma

发明人： Kiyokazu Nakajima ,  Toshirou Nishida ,  Tsuyoshi Takahashi ,  Yoshihito Souma

IPC分类号： A61M37/00 ,  A61M1/00 ,  A61M5/178 ,  A61M31/00 ,  A61F11/00 ,  A61B17/34 ,  A61B1/00 ,  A61B17/29 ,  A61B17/00 ,  A61B19/00 ,  A61M25/00 ,  A61J15/00

CPC分类号： A61B17/3474 ,  A61B17/29 ,  A61B17/3403 ,  A61B17/3415 ,  A61B2017/00278 ,  A61B2090/062 ,  A61J15/0007 ,  A61M25/007

摘要： The guide tube for forming a pneumoperitoneum of the present invention comprising a flexible tube having an inner cavity, has an outer diameter that allows the guide tube to be inserted into a puncture needle, a distal end of the guide tube is closed, the distal end is provided with a tip portion that can be held by holding forceps provided in an endoscope, a proximal end of the guide tube is provided with a connecting portion to an insufflation apparatus, and the guide tube is provided with a side hole region having at least one side hole that can establish communication between the inner cavity of the flexible tube and the outside in a case where the inner cavity is pressurized through insufflation. According to the guide tube for forming a pneumoperitoneum of the present invention, only with single puncture from the body surface into the lumen of a lumen organ, a preliminary pneumoperitoneum can be safely and reliably created without damaging other organs, and, at the same time, the part of the lumen organ wall pierced during formation of the pneumoperitoneum can be used as a route for accessing the peritoneal cavity from the lumen of the lumen organ.

摘要翻译： 本发明的用于形成气腹的导管包括具有内腔的柔性管，具有允许导管插入穿刺针的外径，导管的远端封闭，远端 设置有可以通过设置在内窥镜中的保持镊子来保持的前端部，导管的近端设置有与吹气装置的连接部，并且导管设置有至少具有侧孔区域 在内腔通过吹气加压的情况下，可以在柔性管的内腔与外部之间建立连通的一个侧孔。 根据本发明的气腹形成用引导管，只要从身体表面单次穿刺到管腔器官的腔内即可安全可靠地产生气腹，而不会损伤其他器官，同时， 在气腹形成期间穿孔的管腔器官壁的部分可以用作从管腔器官的腔进入腹膜腔的途径。

公开(公告)号：US09190145B2

公开(公告)日：2015-11-17

申请号：US13819247

申请日：2011-08-25

申请人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

发明人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

IPC分类号： G11C11/00 ,  G11C13/00 ,  H01L27/10

CPC分类号： G11C13/0069 ,  G11C13/0002 ,  G11C2213/79 ,  H01L27/101

摘要： In a drive method for a memory element that includes an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of the order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs, and that can perform a transition from a predetermined low-resistance state to a predetermined high-resistance state and a transition from the high-resistance state to the low-resistance state, a current pulse is applied to the memory element by a constant current circuit upon the transition from the high-resistance state to the low-resistance state.

摘要翻译： 在包括绝缘基板的存储元件的驱动方法中，设置在所述绝缘基板上的第一电极和第二电极以及设置在所述第一电极和所述第二电极之间并且具有所述第一电极和所述第二电极的间隙的电极间间隙 其中发生第一和第二电极之间的电阻值变化的现象，并且可以执行从预定的低电阻状态到预定的高电阻状态的转变以及从高电阻状态到 低电阻状态时，在从高电阻状态向低电阻状态转变时，通过恒流电路将电流脉冲施加到存储元件。

公开(公告)号：US08945369B2

公开(公告)日：2015-02-03

申请号：US12375111

申请日：2007-07-26

申请人： Yoshihiro Itoh ,  Eriko Yamanishi ,  Tsuyoshi Takahashi ,  Hiroyuki Tokunaga

发明人： Yoshihiro Itoh ,  Eriko Yamanishi ,  Tsuyoshi Takahashi ,  Hiroyuki Tokunaga

IPC分类号： C12Q1/25 ,  G01N27/26 ,  G01N27/327

CPC分类号： G01N27/3274

摘要： There is provided a biosensor measurement system which can output a highly-precise measurement result even when an impact such as falling of the sensor occurs or the biosensor is an exposed sensor. An abnormal waveform detection electrode is provided in addition to electrodes for quantitative determination of a target substance. Therefore, when an impact is caused by such as falling of the sensor in a halt period where no voltage is applied in a voltage application algorithm, the abnormal waveform detection electrode can detect the impact. Further, also an exposed sensor can be detected by the abnormal waveform which is detected by the abnormal waveform detection electrode.

摘要翻译： 提供了一种生物传感器测量系统，即使当传感器出现下降或生物传感器是暴露的传感器时也能输出高精度的测量结果。 除了用于定量目标物质的电极之外，还提供异常波形检测电极。 因此，在电压施加算法中，如果在不施加电压的停止期间传感器的下降引起冲击，则异常波形检测电极可以检测出影响。 此外，也可以通过由异常波形检测电极检测到的异常波形来检测曝光的传感器。

公开(公告)号：US20130337571A1

公开(公告)日：2013-12-19

申请号：US14003090

申请日：2012-05-10

申请人： Daiki Mizuoka ,  Hiroyuki Tokunaga ,  Tsuyoshi Takahashi

发明人： Daiki Mizuoka ,  Hiroyuki Tokunaga ,  Tsuyoshi Takahashi

IPC分类号： G01N33/66

CPC分类号： G01N33/66 ,  G01N27/3273 ,  G01N27/3274 ,  Y10T436/144444

摘要： With this biological sample measuring device, the determination section performs measurement at specific intervals in a first measurement period from the start of measurement until a first time, and performs measurement at specific intervals in a second measurement period that comes after the first measurement period, calculates the difference between the measurement values in corresponding specific periods, and finds a plurality of first difference determination values, on the basis of a plurality of current values measured in the first measurement period and a plurality of current values measured in the second measurement period, finds a second difference determination value by finding the difference at specific intervals in the plurality of first difference determination values, and determines whether or not a reagent movement error and/or exposure error of the biological sample measurement sensor has occurred, on the basis of the first and second difference determination values.

摘要翻译： 在该生物样本测定装置中，决定部在从开始测量直到第一次的第一测量期间内以特定间隔进行测量，并且在第一测定周期之后的第二测定期间内，以规定间隔进行测定， 基于在第一测量周期中测量的多个电流值和在第二测量周期中测量的多个电流值，在相应的特定周期中的测量值之间的差异，并且找到多个第一差分确定值，找到 第二差分确定值，通过在多个第一差分确定值中以特定间隔找到差异，并且基于第一差异确定值确定生物样本测量传感器的试剂移动误差和/或曝光误差是否已经发生 和第二差分确定值。

公开(公告)号：US08507122B2

公开(公告)日：2013-08-13

申请号：US12914251

申请日：2010-10-28

申请人： Masao Saito ,  Tomokazu Takashina ,  Tsuyoshi Takahashi

发明人： Masao Saito ,  Tomokazu Takashina ,  Tsuyoshi Takahashi

IPC分类号： H01M10/50

CPC分类号： H01M10/0413 ,  H01M2/1072 ,  H01M6/42 ,  H01M10/613 ,  H01M10/625 ,  H01M10/647 ,  H01M10/6557 ,  H01M10/6563 ,  H01M10/6566

摘要： A power supply device includes rectangular battery cells 1, resin separators 2, end spacers 17, thick metal end plates 10, and coupling members 11. The separator 2 is inserted between the cells 1 to insulate adjacent cells 1 from each other, and in thermal contact with the cells 1. The end spacers 17 cover end battery cells 1 on the opposed end surfaces of a battery block composed of the cells 1 and the separators 2 alternately arranged. The end plates 10 cover the surfaces of the end spacers 17. The coupling members 11 couple the end plates 10 to each other. The separators 2 form gaps 4 for flowing air along the surfaces of the cells 1 in contact with the separators 2. The end spacers 17 have hollow layers 18 on their surfaces in contact with the cells 1, and define closed chambers.

摘要翻译： 电源装置包括矩形电池单元1，树脂隔板2，端部间隔件17，厚金属端板10和联接构件11.隔板2插入电池单元1之间，以使相邻电池单元1相互隔离， 与电池单元1接触。端部间隔件17覆盖由电池单元1和分隔件2交替布置的电池块的相对端面上的端部电池单元1。 端板10覆盖端部间隔件17的表面。联接构件11将端板10彼此连接。 分离器2形成用于沿着与隔板2接触的电池单元1的表面流动空气的间隙4.端部间隔件17在其与电池单元1接触的表面上具有中空层18，并且限定闭合室。

公开(公告)号：US08183558B2

公开(公告)日：2012-05-22

申请号：US13023146

申请日：2011-02-08

申请人： Kozo Makiyama ,  Tsuyoshi Takahashi

发明人： Kozo Makiyama ,  Tsuyoshi Takahashi

IPC分类号： H01L29/06

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/66431

摘要： A compound semiconductor device includes a compound semiconductor substrate; epitaxially grown layers formed over the compound semiconductor substrate and including a channel layer and a resistance lowering cap layer above the channel layer; source and drain electrodes in ohmic contact with the channel layer; recess formed by removing the cap layer between the source and drain electrodes; a first insulating film formed on an upper surface of the cap layer and having side edges at positions retracted from edges, or at same positions as the edges of the cap layer in a direction of departing from the recess; a second insulating film having gate electrode opening and formed covering a semiconductor surface in the recess and the first insulating film; and a gate electrode formed on the recess via the gate electrode opening.

摘要翻译： 化合物半导体器件包括化合物半导体衬底; 在化合物半导体衬底上形成的外延生长层，并且在沟道层上方包括沟道层和电阻降低覆盖层; 源极和漏极与沟道层欧姆接触; 通过去除源极和漏极之间的覆盖层形成的凹陷; 第一绝缘膜，其形成在所述盖层的上表面上，并且在从所述盖层的边缘离开所述凹部的边缘处或与所述盖层的边缘相同的位置处具有侧边缘; 第二绝缘膜，具有栅极电极开口并形成为覆盖所述凹部中的半导体表面和所述第一绝缘膜; 以及通过栅电极开口形成在凹部上的栅电极。

公开(公告)号：US08174871B2

公开(公告)日：2012-05-08

申请号：US12644608

申请日：2009-12-22

申请人： Tsuyoshi Takahashi ,  Yutaka Hayashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Masatoshi Ono

发明人： Tsuyoshi Takahashi ,  Yutaka Hayashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Masatoshi Ono

IPC分类号： G11C11/00

CPC分类号： H01L27/24 ,  G11C13/00 ,  G11C13/0069 ,  G11C13/02 ,  G11C2013/0071 ,  G11C2013/009 ,  G11C2213/79

摘要： Disclosed is a memory cell array including word and first bit lines and second bit lines respectively connected to memory cells, wherein each memory cell includes a MOS transistor and switching element having first and second conductive layers and a gap in which a resistance value changes by applying a predetermined voltage, and data is written by specifying the first bit line to connect it to a ground, specifying the word line and supplying a write voltage to the second bit lines, and read by specifying the word line, and specifying the first bit line to supply a read voltage lower than the write voltage to the second bit lines, and the word line is specified when the voltage of the word line becomes a gate threshold value voltage or more and a sum of a drive voltage and the gate threshold value voltage or less.

摘要翻译： 公开了一种存储单元阵列，包括分别连接到存储单元的单词和第一位线和第二位线，其中每个存储单元包括MOS晶体管和具有第一和第二导电层的开关元件以及通过施加电阻值而改变电阻值的间隙 通过指定第一位线将其连接到地，写入数据，指定字线并向第二位线提供写入电压，并通过指定字线进行读取，并指定第一位线 以向第二位线提供低于写入电压的读取电压，并且当字线的电压变为栅极阈值电压以上并且驱动电压和栅极阈值电压之和时，指定字线 或更少。

公开(公告)号：US07697225B2

公开(公告)日：2010-04-13

申请号：US11901347

申请日：2007-09-17

申请人： Tsuyoshi Takahashi

发明人： Tsuyoshi Takahashi

IPC分类号： G11B5/09

CPC分类号： G11B5/02 ,  G11B5/09 ,  G11B20/10009 ,  G11B20/10481 ,  G11B20/18 ,  G11B2005/001 ,  G11B2220/2516

摘要： A storage apparatus comprises: a current parameter varying section that can make a write current used for writing information on the storage medium and an overshoot amount corresponding to the write current variable; a detection section that detects an error rate or its corresponding error rate parameter for a plurality of combinations of the write current and overshoot amount varied by the current parameter varying section; a saturation factor calculation section that calculates a saturation factor representing a change in the error rate relative to a unit write current value from the error rate or error rate parameter detected by the detection section; and a current parameter setting section that determines current parameters based on the saturation factor obtained by the saturation factor calculation section for setting.

摘要翻译： 存储装置包括：当前参数变化部分，其可以使用于在存储介质上写入信息的写入电流和与写入电流变量相对应的过冲量; 检测部，其检测由所述当前参数变化部变化的写入电流和过冲量的多个组合的误差率或其对应的误差率参数; 饱和因子计算部，从检测部检测出的误差率或误差率参数，计算表示相对于单位写入电流值的误差率变化的饱和因数; 以及电流参数设定部，其基于由所述饱和因子计算部获得的所述饱和因子确定当前参数以进行设定。

公开(公告)号：US07679946B2

公开(公告)日：2010-03-16

申请号：US12141492

申请日：2008-06-18

申请人： Shigeo Furuta ,  Yuichiro Masuda ,  Tsuyoshi Takahashi ,  Masatoshi Ono

发明人： Shigeo Furuta ,  Yuichiro Masuda ,  Tsuyoshi Takahashi ,  Masatoshi Ono

IPC分类号： G11C13/00 ,  G11C11/00

CPC分类号： H01L27/101 ,  B82Y10/00 ,  G11C13/003 ,  G11C2213/76 ,  H01L27/2418 ,  H01L45/04 ,  H01L45/124

摘要： Disclosed is a memory element array comprising a plurality of memory elements arranged in an array, wherein the memory elements are switching elements each including a gap of nanometer order in which a switching phenomenon of resistance is caused by applying a predetermined voltage between electrodes, and the memory element array is provided with tunnel elements respectively connected to the switching elements in series, each of the tunnel elements preventing generation of a sneak path current flowing to another switching element at a time of applying the predetermined voltage.

摘要翻译： 公开了包括以阵列布置的多个存储元件的存储元件阵列，其中存储元件是各自包括纳米级的间隙的开关元件，其中通过在电极之间施加预定电压而引起电阻的切换现象，并且 存储元件阵列设置有分别与开关元件串联连接的隧道元件，每个隧道元件防止在施加预定电压时产生流向另一开关元件的潜行电流电流。

公开(公告)号：US07643237B2

公开(公告)日：2010-01-05

申请号：US11321803

申请日：2005-12-28

申请人： Tsuyoshi Takahashi

发明人： Tsuyoshi Takahashi

IPC分类号： G11B5/02

CPC分类号： G11B27/36 ,  G11B5/09 ,  G11B19/04 ,  G11B2005/001 ,  G11B2220/2516

摘要： A media storage device which reads and writes data from and to a storage medium using a head prevents in advance data loss due to thermal relaxation of data recorded on the storage medium. Management information is created, in units of received write commands, for holding the recording areas on the storage medium of the write data and signal quality information; the management data is stored in a management table, and signal quality is measured, updated, and used in re-recording judgements, in write command units. Thermal relaxation state management can be performed in write command units; thermal relaxation processing is simple, and moreover degradation of recorded data due to thermal relaxation can be detected accurately, and data loss can be prevented.

摘要翻译： 使用头部从存储介质读取和写入数据的媒体存储装置防止由于记录在存储介质上的数据的热弛豫而导致的数据丢失。 创建以接收的写入命令为单位的用于将记录区域保存在写入数据和信号质量信息的存储介质上的管理信息; 管理数据存储在管理表中，信号质量被测量，更新并用于重写记录判断中，在写命令单元中。 热松弛状态管理可以以写命令单位执行; 热松弛处理简单，并且可以准确地检测由于热松弛引起的记录数据的劣化，并且可以防止数据丢失。