发明申请
- 专利标题: High Performance Devices and High Density Devices on Single Chip
- 专利标题(中): 单芯片高性能器件和高密度器件
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申请号: US13571734申请日: 2012-08-10
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公开(公告)号: US20120299107A1公开(公告)日: 2012-11-29
- 发明人: Leland Chang , Isaac Lauer , Jeffrey Sleight
- 申请人: Leland Chang , Isaac Lauer , Jeffrey Sleight
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L27/12
- IPC分类号: H01L27/12
摘要:
A CMOS chip comprising a high performance device region and a high density device region includes a plurality of high performance devices comprising n-type field effect transistors (NFETs) and p-type field effect transistors (PFETs) in the high performance device region, wherein the high performance devices have a high performance pitch; and a plurality of high density devices comprising NFETs and PFETs in the high density device region, wherein the high density devices have a high density pitch, and wherein the high performance pitch is about 2 to 3 times the high density pitch; wherein the high performance device region comprises doped source and drain regions, NFET gate regions having an elevated stress induced using stress memorization technique (SMT), gate silicide and source/drain silicide regions, and a dual stressed liner, and wherein the high density device region comprises doped source and drain regions, gate silicide regions, and a neutral stressed liner.