SEMICONDUCTOR CHIP HAVING VIA ELECTRODES AND STACKED SEMICONDUCTOR CHIPS INTERCONNECTED BY THE VIA ELECTRODES

Invention Application

US20120299194A1 SEMICONDUCTOR CHIP HAVING VIA ELECTRODES AND STACKED SEMICONDUCTOR CHIPS INTERCONNECTED BY THE VIA ELECTRODES 有权

Title translation: 通过电极和通过电极互连的堆叠半导体芯片的半导体芯片

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Patent Title: SEMICONDUCTOR CHIP HAVING VIA ELECTRODES AND STACKED SEMICONDUCTOR CHIPS INTERCONNECTED BY THE VIA ELECTRODES
Patent Title (中): 通过电极和通过电极互连的堆叠半导体芯片的半导体芯片
Application No.: US13569653

Application Date: 2012-08-08
Publication No.: US20120299194A1

Publication Date: 2012-11-29
Inventor: Ho-jin Lee , Hyun-soo Chung , Chang-seong Jeon , Sang-sick Park , Jae-hyun Phee
Applicant: Ho-jin Lee , Hyun-soo Chung , Chang-seong Jeon , Sang-sick Park , Jae-hyun Phee
Priority: KR10-2008-0104986 20081024
Main IPC: H01L23/48
IPC: H01L23/48

SEMICONDUCTOR CHIP HAVING VIA ELECTRODES AND STACKED SEMICONDUCTOR CHIPS INTERCONNECTED BY THE VIA ELECTRODES

Abstract:

A semiconductor device includes a semiconductor substrate and a via electrode. The via electrode has a first portion on the substrate and extends towards the substrate and has a plurality of spikes that extends from the first portion into the substrate, each of the spikes being spaced apart form one another.

Abstract(Chinese):

半导体器件包括半导体衬底和通孔电极。通孔电极在基板上具有第一部分并且朝向基板延伸并且具有从第一部分延伸到基板中的多个尖峰，每个尖峰彼此间隔开。

Public/Granted literature

US08637989B2 Semiconductor chip having via electrodes and stacked semiconductor chips interconnected by the via electrodes Public/Granted day:2014-01-28

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/48	.用于向或自处于工作中的固态物体通电的装置，例如引线或接线端装置