发明申请
- 专利标题: METHOD OF FABRICATING A DEEP TRENCH DEVICE
- 专利标题(中): 制造深层TRENCH装置的方法
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申请号: US13118451申请日: 2011-05-29
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公开(公告)号: US20120302030A1公开(公告)日: 2012-11-29
- 发明人: Hsiu-Chun Lee , Yi-Nan Chen , Hsien-Wen Liu
- 申请人: Hsiu-Chun Lee , Yi-Nan Chen , Hsien-Wen Liu
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L21/28
摘要:
A method of fabricating a deep trench capacitor includes the steps as follows. Firstly, a substrate having a trench therein is provided. Then, a bottom electrode is formed in the substrate around the trench. Later, a capacitor dielectric layer is formed to surround an inner sidewall of the trench. After that, a first conductive layer is form to fill up the trench. Subsequently, a material layer is formed on the substrate. Later, a hole is formed in the material layer, wherein the hole is directly above the trench. Finally, a second conductive layer is form to fill in the hole.