Invention Application
- Patent Title: SEMICONDUCTOR PROCESS AND STRUCTURE THEREOF
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Application No.: US13118561Application Date: 2011-05-30
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Publication No.: US20120306028A1Publication Date: 2012-12-06
- Inventor: Yu-Ren Wang , Te-Lin Sun , Szu-Hao Lai , Po-Chun Chen , Chih-Hsun Lin , Che-Nan Tsai , Chun-Ling Lin , Chiu-Hsien Yeh , Chien-Liang Lin , Shao-Wei Wang , Ying-Wei Yen
- Applicant: Yu-Ren Wang , Te-Lin Sun , Szu-Hao Lai , Po-Chun Chen , Chih-Hsun Lin , Che-Nan Tsai , Chun-Ling Lin , Chiu-Hsien Yeh , Chien-Liang Lin , Shao-Wei Wang , Ying-Wei Yen
- Main IPC: H01L29/772
- IPC: H01L29/772 ; H01L21/28
Abstract:
A semiconductor process is provided, including: a substrate is provided, a buffer layer is formed, and a dielectric layer having a high dielectric constant is formed, wherein the methods of forming the buffer layer include: (1) an oxidation process is performed; and a baking process is performed; Alternatively, (2) an oxidation process is performed; a thermal nitridation process is performed; and a plasma nitridation process is performed; Or, (3) a decoupled plasma oxidation process is performed. Furthermore, a semiconductor structure fabricated by the last process is also provided.
Information query
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