发明申请
US20120309118A1 SILICON WAFER ALIGNMENT METHOD USED IN THROUGH-SILICON-VIA INTERCONNECTION
审中-公开
通过硅 - 互连方式使用的硅波对准方法
- 专利标题: SILICON WAFER ALIGNMENT METHOD USED IN THROUGH-SILICON-VIA INTERCONNECTION
- 专利标题(中): 通过硅 - 互连方式使用的硅波对准方法
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申请号: US13304149申请日: 2011-11-23
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公开(公告)号: US20120309118A1公开(公告)日: 2012-12-06
- 发明人: Pengfei Wang , Qingqing Sun , Shijin Ding , Wei Zhang
- 申请人: Pengfei Wang , Qingqing Sun , Shijin Ding , Wei Zhang
- 申请人地址: CN Shanghai
- 专利权人: Fudan University
- 当前专利权人: Fudan University
- 当前专利权人地址: CN Shanghai
- 优先权: CN201010141746.6 20100408
- 主分类号: H01L21/66
- IPC分类号: H01L21/66
摘要:
A method of silicon wafer alignment used in through-silicon-via interconnection for use in the field of high-integrity packaging technology is disclosed. In one aspect, the method includes aligning and calibrating the upper and lower silicon wafers, stacked and interconnected electrically, so as to improve alignment accuracy of silicon wafers and reduce interconnection resistances. In some embodiments, the integrated circuit chip made by the method improves speed and energy performance.