发明申请
- 专利标题: Metal Gate Stack Formation for Replacement Gate Technology
- 专利标题(中): 用于替代门技术的金属门堆叠形成
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申请号: US13154578申请日: 2011-06-07
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公开(公告)号: US20120315749A1公开(公告)日: 2012-12-13
- 发明人: Klaus Hempel , Andy C. Wei , Robert Binder , Joachim Metzger
- 申请人: Klaus Hempel , Andy C. Wei , Robert Binder , Joachim Metzger
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人地址: KY Grand Cayman
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
Generally, the subject matter disclosed herein relates to modern sophisticated semiconductor devices and methods for forming the same, wherein a reduced threshold voltage (Vt) may be achieved in HK/MG transistor elements that are manufactured based on replacement gate electrode integrations. One illustrative method disclosed herein includes forming a first metal gate electrode material layer above a gate dielectric material layer having a dielectric constant of approximately 10 or greater. The method further includes exposing the first metal gate electrode material layer to an oxygen diffusion process, forming a second metal gate electrode material layer above the first metal gate electrode material layer, and adjusting an oxygen concentration gradient and a nitrogen concentration gradient in at least the first metal gate electrode material layer and the gate dielectric material layer.
公开/授权文献
- US08664103B2 Metal gate stack formation for replacement gate technology 公开/授权日:2014-03-04