公开(公告)号：US20120315749A1

公开(公告)日：2012-12-13

申请号：US13154578

申请日：2011-06-07

申请人： Klaus Hempel ,  Andy C. Wei ,  Robert Binder ,  Joachim Metzger

发明人： Klaus Hempel ,  Andy C. Wei ,  Robert Binder ,  Joachim Metzger

IPC分类号： H01L21/336

CPC分类号： H01L29/66545 ,  H01L21/28176 ,  H01L21/28202 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

摘要： Generally, the subject matter disclosed herein relates to modern sophisticated semiconductor devices and methods for forming the same, wherein a reduced threshold voltage (Vt) may be achieved in HK/MG transistor elements that are manufactured based on replacement gate electrode integrations. One illustrative method disclosed herein includes forming a first metal gate electrode material layer above a gate dielectric material layer having a dielectric constant of approximately 10 or greater. The method further includes exposing the first metal gate electrode material layer to an oxygen diffusion process, forming a second metal gate electrode material layer above the first metal gate electrode material layer, and adjusting an oxygen concentration gradient and a nitrogen concentration gradient in at least the first metal gate electrode material layer and the gate dielectric material layer.

摘要翻译： 通常，本文公开的主题涉及现代复杂的半导体器件及其形成方法，其中可以在基于替换栅极集成制造的HK / MG晶体管元件中实现降低的阈值电压（Vt）。 本文公开的一种说明性方法包括在介电常数约为10或更大的栅介质材料层上形成第一金属栅电极材料层。 该方法还包括将第一金属栅电极材料层暴露于氧扩散过程，在第一金属栅电极材料层上方形成第二金属栅电极材料层，并且至少在第一金属栅电极材料层上调整氧浓度梯度和氮浓度梯度 第一金属栅电极材料层和栅介质材料层。

公开(公告)号：US20110127590A1

公开(公告)日：2011-06-02

申请号：US12901631

申请日：2010-10-11

申请人： Robert Binder ,  Joachim Metzger ,  Klaus Hempel

发明人： Robert Binder ,  Joachim Metzger ,  Klaus Hempel

IPC分类号： H01L29/772 ,  H01L21/336

CPC分类号： H01L21/28088 ,  H01L21/28247 ,  H01L21/321 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/7848

摘要： In a replacement gate approach, the oxygen contents of a cap material may be increased, thereby providing more stable characteristics of the cap material itself and of the high-k dielectric material. Consequently, upon providing a work function adjusting metal species at a very advanced manufacturing stage, corresponding additional treatments may be reduced in number or may even be completely avoided, while at the same time threshold voltage variations may be reduced.

摘要翻译： 在替代栅极方法中，可以增加盖材料的氧含量，从而提供帽材料本身和高k电介质材料的更稳定的特性。 因此，在提供在非常先进的制造阶段调整金属种类的功函数时，相应的附加处理可能数量减少或甚至可以完全避免，同时阈值电压变化可能会降低。

公开(公告)号：US20100221906A1

公开(公告)日：2010-09-02

申请号：US12711481

申请日：2010-02-24

申请人： Joachim Metzger ,  Robert Binder ,  Markus Lenski ,  Klaus Hempel

发明人： Joachim Metzger ,  Robert Binder ,  Markus Lenski ,  Klaus Hempel

IPC分类号： H01L21/28

CPC分类号： H01L29/7833 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66772

摘要： During a manufacturing sequence for forming a sophisticated high-k metal gate structure, a cover layer, such as a silicon layer, may be deposited on a metal cap layer in an in situ process in order to enhance integrity of the metal cap layer. The cover layer may provide superior integrity during the further processing, for instance in view of performing wet chemical cleaning processes and the subsequent deposition of a silicon gate material.

摘要翻译： 在用于形成复杂的高k金属栅极结构的制造顺序期间，覆盖层（例如硅层）可以在原位工艺中沉积在金属覆盖层上，以便提高金属覆盖层的完整性。 覆盖层可以在进一步加工期间提供优异的完整性，例如考虑到执行湿化学清洗工艺和随后沉积硅栅材料。

公开(公告)号：US08664103B2

公开(公告)日：2014-03-04

申请号：US13154578

申请日：2011-06-07

申请人： Klaus Hempel ,  Andy Wei ,  Robert Binder ,  Joachim Metzger

发明人： Klaus Hempel ,  Andy Wei ,  Robert Binder ,  Joachim Metzger

IPC分类号： H01L21/3205

CPC分类号： H01L29/66545 ,  H01L21/28176 ,  H01L21/28202 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

摘要： Generally, the subject matter disclosed herein relates to modern sophisticated semiconductor devices and methods for forming the same, wherein a reduced threshold voltage (Vt) may be achieved in HK/MG transistor elements that are manufactured based on replacement gate electrode integrations. One illustrative method disclosed herein includes forming a first metal gate electrode material layer above a gate dielectric material layer having a dielectric constant of approximately 10 or greater. The method further includes exposing the first metal gate electrode material layer to an oxygen diffusion process, forming a second metal gate electrode material layer above the first metal gate electrode material layer, and adjusting an oxygen concentration gradient and a nitrogen concentration gradient in at least the first metal gate electrode material layer and the gate dielectric material layer.

摘要翻译： 通常，本文公开的主题涉及现代复杂的半导体器件及其形成方法，其中可以在基于替换栅极集成制造的HK / MG晶体管元件中实现降低的阈值电压（Vt）。 本文公开的一种说明性方法包括在介电常数约为10或更大的栅介质材料层上形成第一金属栅电极材料层。 该方法还包括将第一金属栅电极材料层暴露于氧扩散过程，在第一金属栅电极材料层上形成第二金属栅电极材料层，并且至少在第一金属栅电极材料层上调整氧浓度梯度和氮浓度梯度 第一金属栅电极材料层和栅介质材料层。

公开(公告)号：US08298894B2

公开(公告)日：2012-10-30

申请号：US12785185

申请日：2010-05-21

申请人： Markus Lenski ,  Klaus Hempel ,  Vivien Schroeder ,  Robert Binder ,  Joachim Metzger

发明人： Markus Lenski ,  Klaus Hempel ,  Vivien Schroeder ,  Robert Binder ,  Joachim Metzger

IPC分类号： H01L21/8234

CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/82345 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843

摘要： In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet chemical etch recipe using ammonium hydroxide. Consequently, a further work function adjusting material may be formed with superior uniformity, while the efficiency of the subsequent adjusting of the work function may also be increased. Thus, superior uniformity, i.e., less pronounced transistor variability, may be accomplished on the basis of a replacement gate approach in which the work function of the gate electrodes of P-channel transistors and N-channel transistors is adjusted after completing the basic transistor configuration.

摘要翻译： 在复杂半导体器件中的替代栅极方法中，可以基于使用氢氧化铵的湿化学蚀刻配方有效地去除氮化钽蚀刻停止材料。 因此，可以形成具有优异均匀性的另外的功能调节材料，同时可以提高随后的功函数调整的效率。 因此，可以在替代栅极方法的基础上实现优异的均匀性，即较不明显的晶体管可变性，其中在完成基本晶体管配置之后调节P沟道晶体管和N沟道晶体管的栅电极的功函数 。

公开(公告)号：US20120238086A1

公开(公告)日：2012-09-20

申请号：US13422221

申请日：2012-03-16

申请人： Klaus Hempel ,  Robert Binder ,  Joachim Metzger

发明人： Klaus Hempel ,  Robert Binder ,  Joachim Metzger

IPC分类号： H01L21/28

CPC分类号： H01L21/28185 ,  H01L21/823462 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

摘要： When forming sophisticated high-k metal gate electrode structures, for instance on the basis of a replacement gate approach, superior interface characteristics may be obtained on the basis of using a thermally grown base material, wherein the electrically effective thickness may be reduced on the basis of a low temperature anneal process. Consequently, the superior interface characteristics of a thermally grown base material may be provided without requiring high temperature anneal processes, as are typically applied in conventional strategies using a very thin oxide layer formed on the basis of a wet oxidation chemistry.

摘要翻译： 当形成复杂的高k金属栅极电极结构时，例如基于替代栅极方法，可以在使用热生长的基材的基础上获得优异的界面特性，其中可以基于 的低温退火工艺。 因此，可以提供热生长的基材的优异的界面特性，而不需要高温退火工艺，如通常在使用基于湿氧化学化学形成的非常薄的氧化物层的常规策略中应用的那样。

公开(公告)号：US08324091B2

公开(公告)日：2012-12-04

申请号：US12711481

申请日：2010-02-24

申请人： Joachim Metzger ,  Robert Binder ,  Markus Lenski ,  Klaus Hempel

发明人： Joachim Metzger ,  Robert Binder ,  Markus Lenski ,  Klaus Hempel

IPC分类号： H01L21/3205

CPC分类号： H01L29/7833 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66772

摘要： During a manufacturing sequence for forming a sophisticated high-k metal gate structure, a cover layer, such as a silicon layer, may be deposited on a metal cap layer in an in situ process in order to enhance integrity of the metal cap layer. The cover layer may provide superior integrity during the further processing, for instance in view of performing wet chemical cleaning processes and the subsequent deposition of a silicon gate material.

摘要翻译： 在用于形成复杂的高k金属栅极结构的制造顺序期间，覆盖层（例如硅层）可以在原位工艺中沉积在金属覆盖层上，以便提高金属覆盖层的完整性。 覆盖层可以在进一步加工期间提供优异的完整性，例如考虑到执行湿化学清洗工艺和随后沉积硅栅材料。

公开(公告)号：US20100301427A1

公开(公告)日：2010-12-02

申请号：US12785185

申请日：2010-05-21

申请人： Markus Lenski ,  Klaus Hempel ,  Vivien Schroeder ,  Robert Binder ,  Joachim Metzger

发明人： Markus Lenski ,  Klaus Hempel ,  Vivien Schroeder ,  Robert Binder ,  Joachim Metzger

IPC分类号： H01L27/088 ,  H01L21/8234

CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/82345 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843

摘要： In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet chemical etch recipe using ammonium hydroxide. Consequently, a further work function adjusting material may be formed with superior uniformity, while the efficiency of the subsequent adjusting of the work function may also be increased. Thus, superior uniformity, i.e., less pronounced transistor variability, may be accomplished on the basis of a replacement gate approach in which the work function of the gate electrodes of P-channel transistors and N-channel transistors is adjusted after completing the basic transistor configuration.

摘要翻译： 在复杂半导体器件中的替代栅极方法中，可以基于使用氢氧化铵的湿化学蚀刻配方有效地去除氮化钽蚀刻停止材料。 因此，可以形成具有优异均匀性的另外的功能调节材料，同时可以提高随后的功函数调整的效率。 因此，可以在替代栅极方法的基础上实现优异的均匀性，即较不明显的晶体管可变性，其中在完成基本晶体管配置之后调节P沟道晶体管和N沟道晶体管的栅电极的功函数 。

公开(公告)号：US08673759B2

公开(公告)日：2014-03-18

申请号：US13398991

申请日：2012-02-17

申请人： Chris M. Prindle ,  Klaus Hempel ,  Andy C. Wei

发明人： Chris M. Prindle ,  Klaus Hempel ,  Andy C. Wei

IPC分类号： H01L21/28

CPC分类号： H01L21/28114 ,  H01L21/32131 ,  H01L21/32134 ,  H01L21/32135 ,  H01L29/42376 ,  H01L29/51 ,  H01L29/66545

摘要： Semiconductor devices are formed with a gate last, high-K/metal gate process with complete removal of the polysilicon dummy gate and with a gap having a low aspect ratio for the metal fill. Embodiments include forming a dummy gate electrode on a substrate, the dummy gate electrode having a nitride cap, forming spacers adjacent opposite sides of the dummy gate electrode forming a gate trench therebetween, dry etching the nitride cap, tapering the gate trench top corners; performing a selective dry etch on a portion of the dummy gate electrode, and wet etching the remainder of the dummy gate electrode.

摘要翻译： 半导体器件形成有最后的高K /金属栅极工艺，完全去除多晶硅虚拟栅极并且具有用于金属填充物的低纵横比的间隙。 实施例包括在基板上形成虚拟栅电极，虚拟栅电极具有氮化物盖，在虚拟栅电极的相对侧上形成隔板，在其间形成栅极沟槽，干蚀刻氮化物盖，使栅极沟槽顶角逐渐变细; 在虚拟栅电极的一部分上进行选择性干蚀刻，并湿法蚀刻伪栅电极的其余部分。

公开(公告)号：US20130217221A1

公开(公告)日：2013-08-22

申请号：US13398991

申请日：2012-02-17

申请人： Chris M. PRINDLE ,  Klaus Hempel ,  Andy C. Wei

发明人： Chris M. PRINDLE ,  Klaus Hempel ,  Andy C. Wei

IPC分类号： H01L21/28

CPC分类号： H01L21/28114 ,  H01L21/32131 ,  H01L21/32134 ,  H01L21/32135 ,  H01L29/42376 ,  H01L29/51 ,  H01L29/66545

摘要： Semiconductor devices are formed with a gate last, high-K/metal gate process with complete removal of the polysilicon dummy gate and with a gap having a low aspect ratio for the metal fill. Embodiments include forming a dummy gate electrode on a substrate, the dummy gate electrode having a nitride cap, forming spacers adjacent opposite sides of the dummy gate electrode forming a gate trench therebetween, dry etching the nitride cap, tapering the gate trench top corners; performing a selective dry etch on a portion of the dummy gate electrode, and wet etching the remainder of the dummy gate electrode.

摘要翻译： 半导体器件形成有最后的高K /金属栅极工艺，完全去除多晶硅虚拟栅极并且具有用于金属填充物的低纵横比的间隙。 实施例包括在基板上形成虚拟栅电极，虚拟栅电极具有氮化物盖，在虚拟栅电极的相对侧上形成隔板，在其间形成栅极沟槽，干蚀刻氮化物盖，使栅极沟槽顶角逐渐变细; 在虚拟栅电极的一部分上进行选择性干蚀刻，并湿法蚀刻伪栅电极的其余部分。