发明申请
- 专利标题： SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 碳化硅基材及其制造方法
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申请号： US13494317申请日： 2012-06-12
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公开(公告)号： US20120319125A1公开(公告)日： 2012-12-20
- 发明人: Tsutomu HORI , Shin HARADA , Keiji ISHIBASHI , Shinsuke FUJIWARA
- 申请人： Tsutomu HORI , Shin HARADA , Keiji ISHIBASHI , Shinsuke FUJIWARA
- 申请人地址： JP Osaka-shi
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： JP Osaka-shi
- 优先权： JP2011-134050 20110616; JP2011-208675 20110926
- 主分类号： H01L29/16
- IPC分类号： H01L29/16 ; H01L21/31
摘要：
A first single crystal substrate has a first side surface and it is composed of silicon carbide. A second single crystal substrate has a second side surface opposed to the first side surface and it is composed of silicon carbide. A bonding portion connects the first and second side surfaces to each other between the first and second side surfaces. At least a part of the bonding portion is made of particles composed of silicon carbide and having a maximum length not greater than 1 μm.
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