摘要:
A substrate achieving suppressed deterioration of processing accuracy of a semiconductor device due to bending of the substrate, a substrate with a thin film and a semiconductor device formed with the substrate above, and a method of manufacturing the semiconductor device above are obtained. A substrate according to the present invention has a main surface having a diameter of 2 inches or greater, a value for bow at the main surface being not smaller than −40 μm and not greater than −5 μm, and a value for warp at the main surface being not smaller than 5 μm and not greater than 40 μm. Preferably, a value for surface roughness Ra of the main surface of the substrate is not greater than 1 nm and a value for surface roughness Ra of a main surface is not greater than 100 nm.
摘要:
A silicon carbide substrate is made of silicon carbide. In the silicon carbide substrate, a normal line of one main surface of the silicon carbide substrate and a normal line of a {03-38} plane form an angle of 0.5° or smaller in an orthogonal projection to a plane including a direction and a direction. In this way, there can be provided the silicon carbide substrate allowing for both improvement of channel mobility of a semiconductor device and stable characteristics thereof.
摘要:
A silicon carbide semiconductor device having an active layer with reduced defect density which is formed on a substrate made of silicon carbide, and a method of manufacturing the same are provided. A semiconductor device includes a substrate made of silicon carbide and having an off angle of not less than 50° and not more than 65° with respect to a plane orientation {0001}; a buffer layer, and an epitaxial layer, a p-type layer and an n+ region each serving as an active layer. The buffer layer is made of silicon carbide and formed on the substrate. The active layer is made of silicon carbide and formed on the buffer layer. The micropipe density is lower in the active layer than in the substrate. The density of dislocations in which the direction of a Burgers vector corresponds to is higher in the active layer than in the substrate.On the film forming conditions in the step of forming the buffer layer, the composition and the flow rate of the material gas is determined such that the value of the C/Si ratio representing a ratio of carbon atoms to silicon atoms in the material gas used for forming the buffer layer is smaller than the value of the C/Si ratio in the step of forming the active layer.
摘要:
Provided is a method for manufacturing a silicon carbide crystal, including the steps of: placing a seed substrate and a source material for the silicon carbide crystal within a growth container; and growing the silicon carbide crystal with a diameter of more than 4 inches on a surface of the seed substrate by a sublimation method, in the step of growing, a pressure within the growth container being changed from a predetermined pressure, at a predetermined change rate.
摘要:
A silicon carbide substrate is prepared. By exposing the silicon carbide substrate to an atmosphere having a nitrogen dioxide concentration greater than or equal to 2 μg/m3, an oxide film is formed on the silicon carbide substrate.
摘要翻译:制备碳化硅衬底。 通过将碳化硅衬底暴露于二氧化氮浓度大于或等于2μg/ m 3的气氛中,在碳化硅衬底上形成氧化物膜。
摘要:
A substrate has a surface made of a semiconductor having a hexagonal single-crystal structure of polytype 4H. The surface of the substrate is constructed by alternately providing a first plane having a plane orientation of (0-33-8), and a second plane connected to the first plane and having a plane orientation different from the plane orientation of the first plane. A gate insulating film is provided on the surface of the substrate. A gate electrode is provided on the gate insulating film.
摘要:
A silicon carbide substrate includes: a base substrate having a diameter of 70 mm or greater; and a plurality of SiC substrates made of single-crystal silicon carbide and arranged side by side on the base substrate when viewed in a planar view. In other words, the plurality of SiC substrates are arranged side by side on and along the main surface of the base substrate. Further, each of the SiC substrates has a main surface opposite to the base substrate and having an off angle of 20° or smaller relative to a {0001} plane.
摘要:
There are provided a high-quality semiconductor device having stable characteristics and a method for manufacturing such a semiconductor device. The semiconductor device includes: a substrate having a main surface; and a silicon carbide layer formed on the main surface of the substrate and including a side surface inclined relative to the main surface. The side surface substantially includes a {03-3-8} plane. The side surface includes a channel region.
摘要:
A buffer layer is provided on a substrate, is made of silicon carbide containing an impurity, and has a thickness larger than 1 μm and smaller than 7 μm. A drift layer is provided on the buffer layer and is made of silicon carbide having an impurity concentration smaller than that of the buffer layer. In this way, there can be provided a silicon carbide semiconductor device having the drift layer having a desired impurity concentration and a high crystallinity.
摘要:
A silicon carbide semiconductor device having excellent performance characteristics and a method of manufacturing the same are obtained. An extended terrace surface is formed at a surface of an initial growth layer on a 4H—SiC substrate by annealing with the initial growth layer covered with an Si film, and then a new growth layer is epitaxially grown on the initial growth layer. A 3C—SiC portion having a polytype stable at a low temperature is grown on the extended terrace surface, and a 4H—SiC portion is grown on the other region. A trench is formed by selectively removing the 3C—SiC portion with the 4H—SiC portion remaining, and a gate electrode of a UMOSFET is formed in the trench. A channel region of the UMOSFET can be controlled to have a low-order surface, and a silicon carbide semiconductor device having high channel mobility and excellent performance characteristics is obtained.