Silicon carbide semiconductor device and method of manufacturing the same
    3.
    发明授权
    Silicon carbide semiconductor device and method of manufacturing the same 有权
    碳化硅半导体器件及其制造方法

    公开(公告)号:US08421086B2

    公开(公告)日:2013-04-16

    申请号:US12936589

    申请日:2009-02-03

    IPC分类号: H01L31/0312

    摘要: A silicon carbide semiconductor device having an active layer with reduced defect density which is formed on a substrate made of silicon carbide, and a method of manufacturing the same are provided. A semiconductor device includes a substrate made of silicon carbide and having an off angle of not less than 50° and not more than 65° with respect to a plane orientation {0001}; a buffer layer, and an epitaxial layer, a p-type layer and an n+ region each serving as an active layer. The buffer layer is made of silicon carbide and formed on the substrate. The active layer is made of silicon carbide and formed on the buffer layer. The micropipe density is lower in the active layer than in the substrate. The density of dislocations in which the direction of a Burgers vector corresponds to is higher in the active layer than in the substrate.On the film forming conditions in the step of forming the buffer layer, the composition and the flow rate of the material gas is determined such that the value of the C/Si ratio representing a ratio of carbon atoms to silicon atoms in the material gas used for forming the buffer layer is smaller than the value of the C/Si ratio in the step of forming the active layer.

    摘要翻译: 提供一种碳化硅半导体器件及其制造方法,该碳化硅半导体器件具有形成在由碳化硅制成的衬底上的具有降低的缺陷密度的有源层。 半导体器件包括由碳化硅制成并且相对于平面取向{0001}具有不小于50°且不超过65°的偏角的衬底; 缓冲层,外延层,p型层和n +区,各自用作有源层。 缓冲层由碳化硅制成并形成在基底上。 有源层由碳化硅制成并形成在缓冲层上。 活性层中的微管密度比底物中的微管密度低。 汉堡矢量方向对应的位错密度在活性层中高于底物。 在形成缓冲层的步骤中的成膜条件下,确定原料气体的组成和流速,使得表示所使用的原料气体中的碳原子与硅原子的比率的C / Si比值 用于形成缓冲层的步骤小于在形成有源层的步骤中的C / Si比的值。

    METHOD FOR MANUFACTURING SILICON CARBIDE CRYSTAL
    4.
    发明申请
    METHOD FOR MANUFACTURING SILICON CARBIDE CRYSTAL 审中-公开
    制造碳化硅晶体的方法

    公开(公告)号:US20130061801A1

    公开(公告)日:2013-03-14

    申请号:US13566070

    申请日:2012-08-03

    IPC分类号: C30B23/02

    CPC分类号: C30B23/002 C30B29/36

    摘要: Provided is a method for manufacturing a silicon carbide crystal, including the steps of: placing a seed substrate and a source material for the silicon carbide crystal within a growth container; and growing the silicon carbide crystal with a diameter of more than 4 inches on a surface of the seed substrate by a sublimation method, in the step of growing, a pressure within the growth container being changed from a predetermined pressure, at a predetermined change rate.

    摘要翻译: 提供一种制造碳化硅晶体的方法,包括以下步骤:将种子基底和用于碳化硅晶体的源材料放置在生长容器内; 并且通过升华法在种子基底的表面上生长直径大于4英寸的碳化硅晶体,在生长步骤中,生长容器内的压力以预定的压力以预定的变化率变化 。

    Silicon carbide semiconductor device and method of manufacturing the same
    10.
    发明授权
    Silicon carbide semiconductor device and method of manufacturing the same 失效
    碳化硅半导体器件及其制造方法

    公开(公告)号:US08198675B2

    公开(公告)日:2012-06-12

    申请号:US12515386

    申请日:2007-11-16

    IPC分类号: H01L29/161

    摘要: A silicon carbide semiconductor device having excellent performance characteristics and a method of manufacturing the same are obtained. An extended terrace surface is formed at a surface of an initial growth layer on a 4H—SiC substrate by annealing with the initial growth layer covered with an Si film, and then a new growth layer is epitaxially grown on the initial growth layer. A 3C—SiC portion having a polytype stable at a low temperature is grown on the extended terrace surface, and a 4H—SiC portion is grown on the other region. A trench is formed by selectively removing the 3C—SiC portion with the 4H—SiC portion remaining, and a gate electrode of a UMOSFET is formed in the trench. A channel region of the UMOSFET can be controlled to have a low-order surface, and a silicon carbide semiconductor device having high channel mobility and excellent performance characteristics is obtained.

    摘要翻译: 获得具有优异性能的碳化硅半导体器件及其制造方法。 通过用覆盖有Si膜的初始生长层退火,在4H-SiC衬底上的初始生长层的表面上形成延伸的台面表面,然后在初始生长层上外延生长新的生长层。 在延伸的台面上生长具有低温稳定性的3C-SiC部分,在其他区域生长4H-SiC部分。 通过选择性地除去具有4H-SiC部分的3C-SiC部分形成沟槽,并且在沟槽中形成UMOSFET的栅电极。 可以将UMOSFET的沟道区域控制为具有低阶表面,并且获得具有高沟道迁移率和优异性能特性的碳化硅半导体器件。