发明申请
- 专利标题： NAND STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： NAND结构及其制造方法
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申请号： US13063653申请日： 2010-06-25
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公开(公告)号： US20120319185A1公开(公告)日： 2012-12-20
- 发明人: Qingqing Liang , Huicai Zhong , Huilong Zhu
- 申请人： Qingqing Liang , Huicai Zhong , Huilong Zhu
- 申请人地址： CN BEIJING
- 专利权人： INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- 当前专利权人： INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- 当前专利权人地址： CN BEIJING
- 优先权： CN200910241209.6 20091125
- 国际申请： PCT/CN10/74486 WO 20100625
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
The present invention provides a NAND gate structure, comprising: a substrate; a gate insulation layer formed on the substrate; a source/drain region formed in the substrate; a middle gate formed on the gate insulator layer, a first gate and a second gate on each side of the middle gate, first sidewall spacers between the first gate and the middle gate and between the second gate and the middle gate, and second sidewall spacers outside the first gate and the second gate, wherein, a first contact hole region is provided on the middle gate, second contact hole regions are provided respectively on the first gate and the second gate, and the first contact hole region and the second contact hole regions are in staggered arrangement. The present invention proposes a new NAND structure and a method of manufacturing the same. With the NAND structure, about 30-50% area of the chip may be effectively reduced.