发明申请
US20120322192A1 METHOD OF DEFECT REDUCTION IN ION IMPLANTED SOLAR CELL STRUCTURES
审中-公开
离子注入太阳能电池结构中缺陷减少的方法
- 专利标题: METHOD OF DEFECT REDUCTION IN ION IMPLANTED SOLAR CELL STRUCTURES
- 专利标题(中): 离子注入太阳能电池结构中缺陷减少的方法
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申请号: US13160580申请日: 2011-06-15
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公开(公告)号: US20120322192A1公开(公告)日: 2012-12-20
- 发明人: John Graff , Nicholas Bateman
- 申请人: John Graff , Nicholas Bateman
- 申请人地址: US MA Gloucester
- 专利权人: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人地址: US MA Gloucester
- 主分类号: H01L31/18
- IPC分类号: H01L31/18
摘要:
An improved solar cell is disclosed. To create the internal p-n junction, one surface of the substrate is implanted with ions. After the implantation, the substrate is thermally treated. The thermal process distributes the dopant throughout the substrate, while repairing crystal damage caused by implantation. After the thermal process, residual crystal damage may remain, which adversely impacts solar cell efficiency. In order to further reduce the residual damage, the uppermost portion of the surface is then removed, thereby eliminating that portion of the substrate where most of the defects reside. The lower defect concentration reduces recombination and improves efficiency of the solar cell.