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    METHOD OF CREATING TWO DIMENSIONAL DOPING PATTERNS IN SOLAR CELLS
    1.
    发明申请
    METHOD OF CREATING TWO DIMENSIONAL DOPING PATTERNS IN SOLAR CELLS 有权
    在太阳能电池中制造两维DOPING图案的方法

    公开(公告)号：US20130087189A1

    公开(公告)日：2013-04-11

    申请号：US13270290

    申请日：2011-10-11

    申请人： John Graff ,  Nicholas Bateman ,  Joseph Olson ,  Benjamin Riordon

    发明人： John Graff ,  Nicholas Bateman ,  Joseph Olson ,  Benjamin Riordon

    IPC分类号： H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/0682 ,  H01J2237/31711 ,  H01L21/266 ,  H01L31/022441 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： An improved method of fabricating an interdigitated back contact (IBC) solar cell is disclosed. A first mask is used to perform a patterned ion implantation of n-type dopant to create the back surface field. A second mask is then used to create the p-type emitter on the same surface. The second mask may be aligned to the n-type implant, and may be used in a plurality of orientations to create the desired p-type emitter. In some embodiments, a p-type blanket implant is performed as well. In some embodiments, a doping gradient is created.

    摘要翻译： 公开了一种制造交错背接触（IBC）太阳能电池的改进方法。 使用第一掩模来执行n型掺杂剂的图案化离子注入以产生背表面场。 然后使用第二个掩模在相同的表面上创建p型发射器。 第二掩模可以对准n型植入物，并且可以以多个取向使用以产生所需的p型发射体。 在一些实施例中，还执行p型覆盖植入。 在一些实施例中，产生掺杂梯度。

    Doping pattern for point contact solar cells
    3.
    发明授权
    Doping pattern for point contact solar cells 有权
    点接触太阳能电池的掺杂模式

    公开(公告)号：US08993373B2

    公开(公告)日：2015-03-31

    申请号：US13464582

    申请日：2012-05-04

    申请人： Nicholas Bateman ,  John Graff

    发明人： Nicholas Bateman ,  John Graff

    IPC分类号： H01L31/0352 ,  H01L31/18 ,  H01L31/068

    CPC分类号： H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Methods of doping a solar cell, particularly a point contact solar cell, are disclosed. One surface of a solar cell may require portions to be n-doped, while other portions are p-doped. At least one lithography step can be eliminated by the use of a blanket doping of species having one conductivity and a patterned counterdoping process of species having the opposite conductivity. The areas doped during the patterned implant receive a sufficient dose so as to completely reverse the effect of the blanket doping and achieve a conductivity that is opposite the blanket doping. In some embodiments, counterdoped lines are also used to reduce lateral series resistance of the majority carriers.

    摘要翻译： 公开了掺杂太阳能电池，特别是点接触太阳能电池的方法。 太阳能电池的一个表面可能需要部分被n掺杂，而其它部分是p掺杂的。 可以通过使用具有一种导电性的物质的叠层掺杂和具有相反电导率的物质的图案化反掺杂方法来消除至少一个光刻步骤。 在图案化植入期间掺杂的区域接收足够的剂量，以完全反转覆盖掺杂的影响并实现与覆盖掺杂相反的电导率。 在一些实施例中，反掺杂线也用于减少多数载流子的横向串联电阻。

    METHOD OF DEFECT REDUCTION IN ION IMPLANTED SOLAR CELL STRUCTURES
    4.
    发明申请
    METHOD OF DEFECT REDUCTION IN ION IMPLANTED SOLAR CELL STRUCTURES 审中-公开
    离子注入太阳能电池结构中缺陷减少的方法

    公开(公告)号：US20120322192A1

    公开(公告)日：2012-12-20

    申请号：US13160580

    申请日：2011-06-15

    申请人： John Graff ,  Nicholas Bateman

    发明人： John Graff ,  Nicholas Bateman

    IPC分类号： H01L31/18

    CPC分类号： H01L31/068 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

    摘要： An improved solar cell is disclosed. To create the internal p-n junction, one surface of the substrate is implanted with ions. After the implantation, the substrate is thermally treated. The thermal process distributes the dopant throughout the substrate, while repairing crystal damage caused by implantation. After the thermal process, residual crystal damage may remain, which adversely impacts solar cell efficiency. In order to further reduce the residual damage, the uppermost portion of the surface is then removed, thereby eliminating that portion of the substrate where most of the defects reside. The lower defect concentration reduces recombination and improves efficiency of the solar cell.

    摘要翻译： 公开了一种改进的太阳能电池。 为了产生内部p-n结，衬底的一个表面注入离子。 植入后，对基底进行热处理。 热处理在整个衬底中分配掺杂剂，同时修复由植入引起的晶体损伤。 热处理后，剩余的晶体损伤可能会受到影响，这对太阳能电池的效率有不利影响。 为了进一步减少残留损伤，表面的最上部分被去除，从而消除了大部分缺陷所在的基板部分。 较低的缺陷浓度降低了复合，提高了太阳能电池的效率。

    Electronic device contact structures
    6.
    发明申请
    Electronic device contact structures 有权
    电子设备接触结构

    公开(公告)号：US20070114636A1

    公开(公告)日：2007-05-24

    申请号：US11357743

    申请日：2006-02-17

    申请人： Alexei Erchak ,  Elefterios Lidorikis ,  John Graff ,  Milan Minsky ,  Scott Duncan

    发明人： Alexei Erchak ,  Elefterios Lidorikis ,  John Graff ,  Milan Minsky ,  Scott Duncan

    IPC分类号： H01L29/00

    CPC分类号： H01L33/38 ,  H01L51/5203

    摘要： Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. Contact structures (also referred to as electrical contact structures or electrodes) are features on a device that are electrically connected to a power source. The power source can provide current to the device via the contact structures. The contact structures can be designed to improve current distribution in electronic devices. For example, the contact resistance of the contacts may be modified to improve current distribution (e.g., by controlling the shape and/or structure and/or composition of the contacts). The contact structures may include an intervening layer (e.g., a non-ohmic layer) positioned between a surface of the device and a conductive portion extending from a conductive pad. The intervening layer and/or conductive portions may be designed to have certain shapes (e.g., non-linear shapes) that promote current flow from the conductive pad towards the ends of the contacts to increase current spreading. The intervening layer can also reduce light generation underneath the light absorbing contacts to allow a greater percentage of the generated light to emerge from the surface of the device. Advantageously, devices including contact structures of the invention can increase uniformity of light emission and/or otherwise improve performance. As such, these contact structures are particularly suitable for use in a variety of light-emitting devices, including LEDs.

    摘要翻译： 描述了涉及接触结构的电子设备以及与之相关的组件，系统和方法。 接触结构（也称为电接触结构或电极）是电连接到电源的器件上的特征。 电源可以通过接触结构向器件提供电流。 接触结构可以设计成改善电子设备中的电流分布。 例如，可以修改触点的接触电阻以改善电流分布（例如，通过控制触点的形状和/或结构和/或组成）。 接触结构可以包括位于器件的表面和从导电焊盘延伸的导电部分之间的中间层（例如，非欧姆层）。 中间层和/或导电部分可以被设计成具有促进电流从导电焊盘朝向接触端部的流动的某些形状（例如，非线性形状），以增加电流扩散。 中间层还可以减少光吸收触点下方的光产生，从而允许更大百分比的所产生的光从装置的表面露出。 有利地，包括本发明的接触结构的装置可以增加发光的均匀性和/或以其它方式提高性能。 因此，这些接触结构特别适用于包括LED在内的各种发光装置。

    Patterned doping for polysilicon emitter solar cells
    10.
    发明授权
    Patterned doping for polysilicon emitter solar cells 失效
    多晶硅发射体太阳能电池的图案掺杂

    公开(公告)号：US08658458B2

    公开(公告)日：2014-02-25

    申请号：US13160721

    申请日：2011-06-15

    申请人： John Graff

    发明人： John Graff

    IPC分类号： H01L21/00

    CPC分类号： H01L31/1804 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

    摘要： An improved method of manufacturing a polysilicon solar cell is disclosed. To create the polysilicon layer, which has p-type and n-type regions, the layer is grown in the presence of one type of dopant. After the doped polysilicon layer has been created, ions of the opposite dopant conductivity are selectively implanted into portions of the polysilicon layer. This selective implant may be performed using a shadow mask.

    摘要翻译： 公开了一种制造多晶硅太阳能电池的改进方法。 为了形成具有p型和n型区域的多晶硅层，该层在一种类型的掺杂剂的存在下生长。 在已经形成掺杂多晶硅层之后，相反掺杂剂导电性的离子选择性地注入多晶硅层的部分。 该选择性植入可以使用荫罩进行。