发明申请
- 专利标题： Metal Bump Formation
- 专利标题（中）： 金属凸块形成
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申请号： US13161303申请日： 2011-06-15
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公开(公告)号： US20120322255A1公开(公告)日： 2012-12-20
- 发明人: Ming-Da Cheng , Chih-Wei Lin , Hsiu-Jen Lin , Tzong-Hann Yang , Wen-Hsiung Lu , Zheng-Yi Lim , Yi-Wen Wu , Chung-Shi Liu
- 申请人： Ming-Da Cheng , Chih-Wei Lin , Hsiu-Jen Lin , Tzong-Hann Yang , Wen-Hsiung Lu , Zheng-Yi Lim , Yi-Wen Wu , Chung-Shi Liu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A system and method for forming metal bumps is provided. An embodiment comprises attaching conductive material to a carrier medium and then contacting the conductive material to conductive regions of a substrate. Portions of the conductive material are then bonded to the conductive regions using a bonding process to form conductive caps on the conductive regions, and residual conductive material and the carrier medium are removed. A reflow process is used to reflow the conductive caps into conductive bumps.
公开/授权文献
- US08501615B2 Metal bump formation 公开/授权日：2013-08-06
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