发明申请
- 专利标题: A1-BASED ALLOY SPUTTERING TARGET
- 专利标题(中): 基于A1的合金喷射目标
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申请号: US13581436申请日: 2011-02-25
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公开(公告)号: US20120325655A1公开(公告)日: 2012-12-27
- 发明人: Yuki Iwasaki , Katsushi Matsumoto , Toshiaki Takagi , Mamoru Nagao , Hidetada Makino
- 申请人: Yuki Iwasaki , Katsushi Matsumoto , Toshiaki Takagi , Mamoru Nagao , Hidetada Makino
- 申请人地址: JP Hyogo JP Hyogo
- 专利权人: Kobelco Research Institute Inc.,Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
- 当前专利权人: Kobelco Research Institute Inc.,Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
- 当前专利权人地址: JP Hyogo JP Hyogo
- 优先权: JP2010-043073 20100226
- 国际申请: PCT/JP2011/054396 WO 20110225
- 主分类号: C23C14/34
- IPC分类号: C23C14/34
摘要:
The present invention provides a technique capable of suppressing generation of splash even at high-speed deposition by an Al-based alloy sputtering target containing Ni and a rare earth element, wherein when crystallographic orientations , , , and in a normal direction of each sputtering surface at a surface part of the Al-based alloy sputtering target, a ¼×t (t: thickness of the Al-based alloy sputtering target) part thereof and a ½×t part thereof are observed by an electron backscatter diffraction pattern method, the Al-based alloy sputtering target satisfies the requirement (1) that, when a total of area fractions of the ±15°, ±15° and ±15° is defined as R (as for Rat each part, the R at the surface part is defined as Ra, the R at the ¼×t part is defined as Rb, and the R at the ½×t part is defined as Rc), R is 0.35 or more and 0.80 or less; and the requirement (2) that each of the Ra, the Rb and the Rc falls in the range of ±20% of an average R value [Rave=(Ra+Rb+Rc)/3].