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    A1-BASED ALLOY SPUTTERING TARGET
    1.
    发明申请
    A1-BASED ALLOY SPUTTERING TARGET 审中-公开
    基于A1的合金喷射目标

    公开(公告)号：US20120325655A1

    公开(公告)日：2012-12-27

    申请号：US13581436

    申请日：2011-02-25

    申请人： Yuki Iwasaki ,  Katsushi Matsumoto ,  Toshiaki Takagi ,  Mamoru Nagao ,  Hidetada Makino

    发明人： Yuki Iwasaki ,  Katsushi Matsumoto ,  Toshiaki Takagi ,  Mamoru Nagao ,  Hidetada Makino

    IPC分类号： C23C14/34

    CPC分类号： C23C14/3414 ,  C22C21/00

    摘要： The present invention provides a technique capable of suppressing generation of splash even at high-speed deposition by an Al-based alloy sputtering target containing Ni and a rare earth element, wherein when crystallographic orientations , , , and in a normal direction of each sputtering surface at a surface part of the Al-based alloy sputtering target, a ¼×t (t: thickness of the Al-based alloy sputtering target) part thereof and a ½×t part thereof are observed by an electron backscatter diffraction pattern method, the Al-based alloy sputtering target satisfies the requirement (1) that, when a total of area fractions of the ±15°, ±15° and ±15° is defined as R (as for Rat each part, the R at the surface part is defined as Ra, the R at the ¼×t part is defined as Rb, and the R at the ½×t part is defined as Rc), R is 0.35 or more and 0.80 or less; and the requirement (2) that each of the Ra, the Rb and the Rc falls in the range of ±20% of an average R value [Rave=(Ra+Rb+Rc)/3].

    摘要翻译： 本发明提供一种能够通过含有Ni和稀土元素的Al系合金溅射靶在高速沉积时抑制飞溅的技术，其中当晶体取向<001>，<011>，<111>时， 在Al基合金溅射靶的表面部分的每个溅射表面的法线方向上，¼×t（t：Al基合金溅射靶的厚度）部分和½ 通过电子背散射衍射图法观察其×t部分，Al系合金溅射靶满足以下要求（1）：当<001>±15°，<011>±15°的面积分数 并且<112>±15°被定义为R（对于大鼠每个部分，表面部分的R定义为Ra，¼×t部分的R定义为Rb，R在½×t 部分定义为Rc），R为0.35以上至0.80以下; 以及R a，R b和R c中的每一个落在平均R值[Rave =（Ra + Rb + Rc）/ 3]的±20％的范围内的要求（2）。