-
公开(公告)号：US20120325655A1
公开(公告)日：2012-12-27
申请号：US13581436
申请日：2011-02-25
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , C22C21/00
摘要： The present invention provides a technique capable of suppressing generation of splash even at high-speed deposition by an Al-based alloy sputtering target containing Ni and a rare earth element, wherein when crystallographic orientations , , , and in a normal direction of each sputtering surface at a surface part of the Al-based alloy sputtering target, a ¼×t (t: thickness of the Al-based alloy sputtering target) part thereof and a ½×t part thereof are observed by an electron backscatter diffraction pattern method, the Al-based alloy sputtering target satisfies the requirement (1) that, when a total of area fractions of the ±15°, ±15° and ±15° is defined as R (as for Rat each part, the R at the surface part is defined as Ra, the R at the ¼×t part is defined as Rb, and the R at the ½×t part is defined as Rc), R is 0.35 or more and 0.80 or less; and the requirement (2) that each of the Ra, the Rb and the Rc falls in the range of ±20% of an average R value [Rave=(Ra+Rb+Rc)/3].
摘要翻译： 本发明提供一种能够通过含有Ni和稀土元素的Al系合金溅射靶在高速沉积时抑制飞溅的技术，其中当晶体取向<001>，<011>，<111>时， 在Al基合金溅射靶的表面部分的每个溅射表面的法线方向上，¼×t（t：Al基合金溅射靶的厚度）部分和½ 通过电子背散射衍射图法观察其×t部分，Al系合金溅射靶满足以下要求（1）：当<001>±15°，<011>±15°的面积分数 并且<112>±15°被定义为R（对于大鼠每个部分，表面部分的R定义为Ra，¼×t部分的R定义为Rb，R在½×t 部分定义为Rc），R为0.35以上至0.80以下; 以及R a，R b和R c中的每一个落在平均R值[Rave =（Ra + Rb + Rc）/ 3]的±20％的范围内的要求（2）。
-
公开(公告)号：US20130233706A1
公开(公告)日：2013-09-12
申请号：US13878334
申请日：2011-10-05
申请人： Katsushi Matsumoto , Katsutoshi Takagi , Yuichi Taketomi , Junichi Nakai , Hidetada Makino , Toshiaki Takagi
发明人： Katsushi Matsumoto , Katsutoshi Takagi , Yuichi Taketomi , Junichi Nakai , Hidetada Makino , Toshiaki Takagi
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , B22F3/115 , B22F3/15 , B22F3/24 , C22C1/0416 , C22C21/00 , C22F1/04 , C23C16/45504 , C23C16/4585 , C23C16/4586
摘要： There is provided an Al-based alloy sputtering target, which can provide an enhanced deposition rate (or sputtering rate) when the sputtering target is used, and which can preferably prevent the occurrence of splashes. The Al-based alloy sputtering target of the present invention includes Ta and may preferably include an Al—Ta-based intermetallic compound containing Al and Ta, which compound has a mean particle diameter of from 0.005 μm to 1.0 μm and a mean interparticle distance of from 0.01 μm to 10.0 μm.
摘要翻译： 提供了一种Al系合金溅射靶，其可以在使用溅射靶时提供增强的沉积速率（或溅射速率），并且可以优选地防止飞溅的发生。 本发明的Al系合金溅射靶包括Ta，并且优选包括含有Al和Ta的Al-Ta系金属间化合物，该化合物的平均粒径为0.005〜1.0μm，平均粒子间距离为 从0.01毫米到10.0毫米。
-
公开(公告)号：US08329094B2
公开(公告)日：2012-12-11
申请号：US12934090
申请日：2009-03-30
申请人： Toshiaki Takagi , Mamoru Nagao
发明人： Toshiaki Takagi , Mamoru Nagao
摘要： A magnesium alloy having excellent strength and elongation at high temperatures and further having excellent creep characteristics at high temperatures. Also provided is a process for producing the alloy. In producing the magnesium alloy, a magnesium alloy containing yttrium and samarium in respective specific amounts is cast and the resultant cast is subjected to a solution heat treatment, subsequently hot working, and then an aging treatment, thereby reducing the average crystal grain diameter of the structure. In addition, the amounts of the yttrium and samarium in solution in the magnesium matrix are balanced with the number of precipitate particles of a specific size in the crystal grains. The magnesium alloy thus obtained has excellent strength and elongation at high temperatures and further having excellent creep characteristics at high temperatures.
摘要翻译： 镁合金在高温下具有优异的强度和伸长率，并且在高温下还具有优异的蠕变特性。 还提供了一种用于生产合金的方法。 在制造镁合金时，铸造含有特定量的钇和钐的镁合金，然后对所得铸件进行固溶热处理，随后进行热加工，然后进行时效处理，从而降低了平均晶粒直径 结构体。 此外，镁基质中的溶液中的钇和钐的量与晶粒中特定尺寸的沉淀颗粒的数量平衡。 由此获得的镁合金在高温下具有优异的强度和伸长率，并且在高温下还具有优异的蠕变特性。
-
公开(公告)号：US09671182B2
公开(公告)日：2017-06-06
申请号：US12254345
申请日：2008-10-20
申请人： Toshiaki Takagi , Yasuhiro Aruga , Mamoru Nagao , Takashi Shirai , Masato Watanabe , Akihiko Ishibashi
发明人： Toshiaki Takagi , Yasuhiro Aruga , Mamoru Nagao , Takashi Shirai , Masato Watanabe , Akihiko Ishibashi
摘要： The present invention provides a copper alloy tube for heat exchangers which is tolerable to a high operating pressure of new cooling media such as carbon dioxide and HFC-based fluorocarbons, and is excellent in fracture strength, even if the tube is thinned, and a copper alloy tube for a heat exchanger which has a composition having specified amounts of Sn and P, has an average crystal grain size of 30 μm or less and has a high strength of 250 MPa or more of a tensile strength in the longitudinal direction of the tube improves the fracture strength as a texture in which the orientation distribution density in the Goss orientation is 4% or less.
-
5.发明申请ALUMINUM ALLOY FILM FOR DISPLAY DEVICE, DISPLAY DEVICE, AND SPUTTERING TARGET 审中-公开用于显示器件的铝合金膜，显示器件和溅射靶公开(公告)号：US20110198602A1
公开(公告)日：2011-08-18
申请号：US13122937
申请日：2009-11-05
申请人： Akira Nanbu , Hiroshi Goto , Aya Miki , Hiroyuki Okuno , Junichi Nakai , Tomoya Kishi , Toshiaki Takagi , Shigenobu Namba , Mamoru Nagao , Nobuhiro Kobayashi
发明人： Akira Nanbu , Hiroshi Goto , Aya Miki , Hiroyuki Okuno , Junichi Nakai , Tomoya Kishi , Toshiaki Takagi , Shigenobu Namba , Mamoru Nagao , Nobuhiro Kobayashi
CPC分类号： C23C14/18 , C23C14/3414 , G02F1/136227 , G02F1/1368 , H01L21/2855 , H01L23/53219 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , Y10T428/12014 , H01L2924/00
摘要： Disclosed is an Al alloy film which can be in direct contact with a transparent pixel electrode in a wiring structure of a thin film transistor substrate that is used in a display device, and which has improved corrosion resistance against an amine remover liquid that is used during the production process of the thin film transistor. Also disclosed is a display device using the Al alloy film. Specifically disclosed is an Al alloy film for a display device, said Al alloy film being directly connected with a transparent conductive film on a substrate of a display device, and containing 0.05-2.0 atom % of Ge, at least one element selected from among element group X (Ni, Ag, Co, Zn and Cu), and 0.02-2 atom % of at least one element selected from among element group Q consisting of the rare earth elements. A Ge-containing deposit and/or a Ge-concentrated part is present in the Al alloy film for a display device. Also specifically disclosed is a display device comprising the Al alloy film.
摘要翻译： 公开了一种Al合金膜，其可以与用于显示装置的薄膜晶体管基板的布线结构中的透明像素电极直接接触，并且其对于在用于显示装置的胺去除剂液体下具有改善的耐腐蚀性 薄膜晶体管的生产工艺。 还公开了使用Al合金膜的显示装置。 具体公开了一种用于显示装置的Al合金膜，所述Al合金膜与显示装置的基板上的透明导电膜直接连接，并含有0.05-2.0原子％的Ge，至少一种元素选自元素 组X（Ni，Ag，Co，Zn和Cu）和0.02-2原子％的选自由稀土元素构成的元素组Q中的至少一种元素。 在用于显示装置的Al合金膜中存在含Ge沉积物和/或Ge浓缩部分。 还具体公开了包括Al合金膜的显示装置。
-
公开(公告)号：US20110017367A1
公开(公告)日：2011-01-27
申请号：US12934090
申请日：2009-03-30
申请人： Toshiaki Takagi , Mamoru Nagao
发明人： Toshiaki Takagi , Mamoru Nagao
IPC分类号： C22C23/06
摘要： A magnesium alloy having excellent strength and elongation at high temperatures and further having excellent creep characteristics at high temperatures. Also provided is a process for producing the alloy. In producing the magnesium alloy, a magnesium alloy containing yttrium and samarium in respective specific amounts is cast and the resultant cast is subjected to a solution heat treatment, subsequently hot working, and then an aging treatment, thereby reducing the average crystal grain diameter of the structure. In addition, the amounts of the yttrium and samarium in solution in the magnesium matrix are balanced with the number of precipitate particles of a specific size in the crystal grains. The magnesium alloy thus obtained has excellent strength and elongation at high temperatures and further having excellent creep characteristics at high temperatures.
摘要翻译： 镁合金在高温下具有优异的强度和伸长率，并且在高温下还具有优异的蠕变特性。 还提供了一种用于生产合金的方法。 在制造镁合金时，铸造含有特定量的钇和钐的镁合金，然后对所得铸件进行固溶热处理，随后进行热加工，然后进行时效处理，从而降低了平均晶粒直径 结构体。 此外，镁基质中溶液中的钇和钐的量与晶粒中特定尺寸的沉淀颗粒的数量平衡。 由此获得的镁合金在高温下具有优异的强度和伸长率，并且在高温下还具有优异的蠕变特性。
-
公开(公告)号：US09551065B2
公开(公告)日：2017-01-24
申请号：US13981414
申请日：2011-12-20
CPC分类号： C23C14/3407 , C22C1/02 , C22C9/00 , C22C21/00 , C23C14/3414
摘要： Film-formation rate can be increased in the pre-sputtering and in the subsequent sputtering onto a substrate or the like, and sputtering failures such as splashes can be inhibited, by making an Al-based alloy or Cu-based alloy spurting target fulfill the following requirements (1) and/or (2) when the total area ratio of crystal orientations ±15°, ±15°, ±15°, ±15°, and ±15° in the sputtering surface normal direction in the depth within 1 mm from the uppermost surface of the sputtering target is referred to as a P value: (1) the area ratio PA of ±15° to the P value: 40% or lower; and (2) the total area ratio PB of ±15° and ±15° to the P value: 20% or higher.
摘要翻译： 可以在预溅射和随后的溅射中将成膜速度提高到基板等上，并且通过使Al基合金或Cu基合金喷涂靶达到 晶体取向的总面积比<001>±15°，<011>±15°，<111>±15°，<112>±15°和<012时的以下要求（1）和/或（2） 在溅射靶的最上表面1mm以内的深度的溅射面法线方向>±15°被称为P值：（1）<011>±15°的面积比PA与P值 ：40％以下; 和（2）总面积比PB <001>±15°和<111>±15°至P值：20％或更高。
-
8.发明申请公开(公告)号：US20130306468A1
公开(公告)日：2013-11-21
申请号：US13981414
申请日：2011-12-20
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , C22C1/02 , C22C9/00 , C22C21/00 , C23C14/3414
摘要： Film-formation rate can be increased in the pre-sputtering and in the subsequent sputtering onto a substrate or the like, and sputtering failures such as splashes can be inhibited, by making an Al-based alloy or Cu-based alloy spurting target fulfill the following requirements (1) and/or (2) when the total area ratio of crystal orientations ±15°, ±15°, ±15°, ±15°, and ±15° in the sputtering surface normal direction in the depth within 1 mm from the uppermost surface of the sputtering target is referred to as a P value: (1) the area ratio PA of ±15° to the P value: 40% or lower; and (2) the total area ratio PB of ±15° and ±15° to the P value: 20% or higher.
摘要翻译： 可以在预溅射和随后的溅射中将成膜速度提高到基板等上，并且通过使Al基合金或Cu基合金喷涂靶满足 晶体取向的总面积比<001>±15°，<011>±15°，<111>±15°，<112>±15°和<012时的以下要求（1）和/或（2） 在溅射靶的最上表面1mm以内的深度的溅射面法线方向>±15°被称为P值：（1）<011>±15°的面积比PA与P值 ：40％以下; 和（2）总面积比PB <001>±15°和<111>±15°至P值：20％或更高。
-
公开(公告)号：US08007345B2
公开(公告)日：2011-08-30
申请号：US11959930
申请日：2007-12-19
申请人： Akira Onose , Toshiaki Takagi
发明人： Akira Onose , Toshiaki Takagi
IPC分类号： B24B23/00
CPC分类号： B24B23/06
摘要： A portable belt sander having a drive pulley capable of being produced at a limited period. The sander includes a main body accommodating therein a motor, a drive shaft rotationally driven by the motor, a drive pulley coupled to the drive shaft, a driven shaft, and an endless polishing belt mounted between the drive pulley and the driven pulley. The drive pulley includes a base section coupling the drive shaft and made from a rigid material, and an outer low hardness section made from an elastomer material and disposed over an outer peripheral surface of the base section and integrally therewith by injection molding. Mating surfaces between the base section and the outer section are irregularly formed.
摘要翻译： 一种便携式带式打磨机，其具有能够在有限的周期内生产的驱动皮带轮。 砂光机包括容纳电动机的主体，由电动机旋转驱动的驱动轴，连接到驱动轴的驱动滑轮，从动轴和安装在驱动滑轮与从动滑轮之间的环形抛光带。 驱动滑轮包括：联接驱动轴并由刚性材料制成的基部和由弹性体材料制成的外部低硬度部分，并且设置在基部的外周表面上并通过注射成型一体地形成。 基部和外部之间的配合表面不规则地形成。
-
公开(公告)号：USD380132S
公开(公告)日：1997-06-24
申请号：US39111
申请日：1995-05-18
-
-
-
-
-
-
-
-
-
搜索结果
36 条记录 (耗时 0.035 秒)
