发明申请
US20120326161A1 NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
审中-公开
氮化物半导体元件及其制造方法
- 专利标题: NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
- 专利标题(中): 氮化物半导体元件及其制造方法
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申请号: US13597869申请日: 2012-08-29
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公开(公告)号: US20120326161A1公开(公告)日: 2012-12-27
- 发明人: Toshiya YOKOGAWA , Mitsuaki OYA , Atsushi YAMADA , Akihiro ISOZAKI
- 申请人: Toshiya YOKOGAWA , Mitsuaki OYA , Atsushi YAMADA , Akihiro ISOZAKI
- 申请人地址: JP Osaka
- 专利权人: PANASONIC CORPORATION
- 当前专利权人: PANASONIC CORPORATION
- 当前专利权人地址: JP Osaka
- 优先权: JP2010-085983 20100402
- 主分类号: H01L29/20
- IPC分类号: H01L29/20 ; H01L21/20
摘要:
An exemplary nitride-based semiconductor device includes: a semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x≧0, y≧0, and z>0) layer 26. The electrode 30 includes a Zn layer 32 and a Ag layer 34 provided on the Zn layer 32. The Zn layer is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.