公开(公告)号：US20110253976A1

公开(公告)日：2011-10-20

申请号：US13167026

申请日：2011-06-23

申请人： Mitsuaki OYA ,  Toshiya YOKOGAWA ,  Atsushi YAMADA ,  Akihiro ISOZAKI

发明人： Mitsuaki OYA ,  Toshiya YOKOGAWA ,  Atsushi YAMADA ,  Akihiro ISOZAKI

IPC分类号： H01L33/06 ,  H01L33/32

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/3202 ,  H01S5/32341

摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

公开(公告)号：US20130015427A1

公开(公告)日：2013-01-17

申请号：US13618436

申请日：2012-09-14

申请人： Mitsuaki OYA ,  Toshiya YOKOGAWA ,  Atsushi YAMADA ,  Akihiro ISOZAKI

发明人： Mitsuaki OYA ,  Toshiya YOKOGAWA ,  Atsushi YAMADA ,  Akihiro ISOZAKI

IPC分类号： H01L33/04

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/3202 ,  H01S5/32341

摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体层叠结构体20上的电极30.电极30包括设置在Mg层32上的Mg层32和Ag层34.Mg层32与p型半导体区域的表面接触 半导体多层结构20。

公开(公告)号：US20130001513A1

公开(公告)日：2013-01-03

申请号：US13610159

申请日：2012-09-11

申请人： Toshiya YOKOGAWA ,  Mitsuaki OYA ,  Atsushi YAMADA ,  Akihiro ISOZAKI

发明人： Toshiya YOKOGAWA ,  Mitsuaki OYA ,  Atsushi YAMADA ,  Akihiro ISOZAKI

IPC分类号： H01L33/04

CPC分类号： H01L21/02609 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L24/14 ,  H01L33/32 ,  H01L33/40 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/32341 ,  H01L2924/00

摘要： A nitride-based semiconductor device includes: a semiconductor multilayer structure 20 including a p-type GaN-based semiconductor region whose surface 12 is inclined by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is provided on the p-type semiconductor region. The p-type semiconductor region is made of an AlxInyGazN (where x+y+z=1, x≧0, y≧0, and z≧0) layer 26. The electrode 30 includes a Zn layer 32, and the Zn layer 32 is in contact with the surface of the p-type semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 氮化物类半导体器件包括：半导体层叠结构20，其包括表面12倾斜不小于1°且不大于5°的p型GaN基半导体区域，或者主表面具有多个 的平面台阶; 以及设置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z≥0）层26制成。电极30包括Zn层32，Zn层32 32与半导体多层结构体20的p型半导体区域的表面接触。

公开(公告)号：US20120326161A1

公开(公告)日：2012-12-27

申请号：US13597869

申请日：2012-08-29

申请人： Toshiya YOKOGAWA ,  Mitsuaki OYA ,  Atsushi YAMADA ,  Akihiro ISOZAKI

发明人： Toshiya YOKOGAWA ,  Mitsuaki OYA ,  Atsushi YAMADA ,  Akihiro ISOZAKI

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L33/405 ,  H01L21/28575 ,  H01L24/14 ,  H01L29/045 ,  H01L29/452 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2933/0016 ,  H01L2924/00

摘要： An exemplary nitride-based semiconductor device includes: a semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x≧0, y≧0, and z>0) layer 26. The electrode 30 includes a Zn layer 32 and a Ag layer 34 provided on the Zn layer 32. The Zn layer is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 示例性的氮化物基半导体器件包括：半导体多层结构20，其包括具有从m面倾斜不小于1°且不大于5°的角度的表面12的p型半导体区域，或者 主表面具有多个m平面步骤; 以及设置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z> 0）层26形成。电极30包括Zn层32和Ag层34 设置在Zn层32上.Zn层与半导体多层结构体20的p型半导体区域的表面12接触。

公开(公告)号：US20110253977A1

公开(公告)日：2011-10-20

申请号：US13167064

申请日：2011-06-23

申请人： Mitsuaki OYA ,  Toshiya YOKOGAWA ,  Atsushi YAMADA ,  Akihiro ISOZAKI

发明人： Mitsuaki OYA ,  Toshiya YOKOGAWA ,  Atsushi YAMADA ,  Akihiro ISOZAKI

IPC分类号： H01L33/06 ,  H01L29/201 ,  H01L21/263

CPC分类号： H01L21/28575 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40

摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体多层结构体20上的电极30.电极30包括Zn层32和设置在Zn层32上的Ag层34.Zn层32与p型半导体区域的表面接触 半导体多层结构20。

公开(公告)号：US20110248307A1

公开(公告)日：2011-10-13

申请号：US13167664

申请日：2011-06-23

申请人： Mitsuaki OYA ,  Toshiya YOKOGAWA ,  Atsushi YAMADA ,  Akihiro ISOZAKI

发明人： Mitsuaki OYA ,  Toshiya YOKOGAWA ,  Atsushi YAMADA ,  Akihiro ISOZAKI

IPC分类号： H01L33/50 ,  H01L21/20 ,  H01L29/20 ,  H01L33/40

CPC分类号： H01L33/40 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0095 ,  H01L33/16 ,  H01L33/32 ,  H01L2933/0016

摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and a metal layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

公开(公告)号：US20120199844A1

公开(公告)日：2012-08-09

申请号：US13447368

申请日：2012-04-16

申请人： Toshiya YOKOGAWA ,  Mitsuaki OYA ,  Atsushi YAMADA ,  Ryou KATO

发明人： Toshiya YOKOGAWA ,  Mitsuaki OYA ,  Atsushi YAMADA ,  Ryou KATO

IPC分类号： H01L29/20 ,  H01L21/20 ,  H01L21/28 ,  H01L33/50

CPC分类号： H01L33/32 ,  H01L33/16 ,  H01L33/40 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2924/181 ,  Y10T436/112499 ,  H01L2924/00012

摘要： A nitride-based semiconductor device according to the present disclosure includes a nitride-based semiconductor multilayer structure 20 with a p-type semiconductor region, of which the surface 12 defines a tilt angle of one to five degrees with respect to an m plane, and an electrode 30, which is arranged on the p-type semiconductor region. The p-type semiconductor region is made of an AlxInyGazN (where x+y+z=1, x≧0, y≧0 and z≧0) semiconductor layer 26. The electrode 30 includes an Mg layer 32, which is in contact with the surface 12 of the p-type semiconductor region, and a metal layer 34 formed on the Mg layer 32. The metal layer 34 is formed from at least one metallic element that is selected from the group consisting of Pt, Mo and Pd.

摘要翻译： 根据本公开的氮化物基半导体器件包括具有p型半导体区域的氮化物基半导体多层结构20，其表面12相对于m平面限定1至5度的倾斜角，以及 布置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z≥0）半导体层26制成。电极30包括Mg层32，其接触 与p型半导体区域的表面12以及形成在Mg层32上的金属层34.金属层34由选自Pt，Mo和Pd中的至少一种金属元素形成。

公开(公告)号：US20120182495A1

公开(公告)日：2012-07-19

申请号：US13432022

申请日：2012-03-28

申请人： Toshiya YOKOGAWA ,  Akira INOUE ,  Masaki FUJIKANE ,  Mitsuaki OYA ,  Atsushi YAMADA ,  Tadashi YANO

发明人： Toshiya YOKOGAWA ,  Akira INOUE ,  Masaki FUJIKANE ,  Mitsuaki OYA ,  Atsushi YAMADA ,  Tadashi YANO

IPC分类号： G02F1/1335 ,  H01L33/08 ,  H01L33/06

CPC分类号： H01L25/0753 ,  G02F1/133603 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/007 ,  H01L33/18 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An illuminating device includes at least first and second nitride-based semiconductor light-emitting elements each having a semiconductor chip with an active layer region. The active layer region is at an angle of 1° or more with an m plane, and an angle formed by a normal line of a principal surface in the active layer region and a normal line of the m plane is 1° or more and 5° or less. The first and second nitride-based semiconductor light-emitting elements have thicnknesses of d1 and d2, respectively, and emit the polarized light having wavelengths λ1 and λ2, respectively, where the inequarities of λ1

摘要翻译： 照明装置至少包括第一和第二氮化物基半导体发光元件，每个半导体发光元件具有带有活性层区域的半导体芯片。 有源层区域与m面成1°以上的角度，由有源层区域的主面的法线和m面的法线形成的角度为1°以上5 或更少。 第一和第二氮化物基半导体发光元件分别具有d1和d2的差异，并分别发射波长λ1和λ2的偏振光，其中满足λ1<λ2和d1

公开(公告)号：US20110248308A1

公开(公告)日：2011-10-13

申请号：US13167865

申请日：2011-06-24

申请人： Mitsuaki OYA ,  Toshiya YOKOGAWA ,  Atsushi YAMADA ,  Ryou KATO

发明人： Mitsuaki OYA ,  Toshiya YOKOGAWA ,  Atsushi YAMADA ,  Ryou KATO

IPC分类号： H01L33/50 ,  H01L21/20 ,  H01L29/20 ,  H01L33/40

CPC分类号： H01L33/40 ,  H01L33/16 ,  H01L33/32 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/3202 ,  H01S5/32341

摘要： A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg alloy layer 32 which is formed of Mg and a metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

公开(公告)号：US20120319156A1

公开(公告)日：2012-12-20

申请号：US13596849

申请日：2012-08-28

申请人： Toshiya YOKOGAWA ,  Mitsuaki OYA ,  Atsushi YAMADA ,  Ryou KATO

发明人： Toshiya YOKOGAWA ,  Mitsuaki OYA ,  Atsushi YAMADA ,  Ryou KATO

IPC分类号： H01L33/30 ,  H01L33/50

CPC分类号： H01L33/40 ,  B82Y20/00 ,  H01L29/045 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/32 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/32341

摘要： An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure 20 which has a p-type GaN-based semiconductor region whose surface 12 is inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is arranged on the p-type GaN-based semiconductor region. The electrode 30 includes a Mg alloy layer 32 which is formed from Mg and metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with the surface 12 of the p-type GaN-based semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 示例性的基于氮化物的半导体器件包括：氮化物基半导体多层结构20，其具有p型GaN基半导体区域，其表面12从m面倾斜不小于1°的角度，而不是更多 超过5°或主表面具有多个m平面步骤; 以及布置在p型GaN基半导体区域上的电极30。 电极30包括由Mg和选自Pt，Mo和Pd的金属形成的Mg合金层32。 Mg合金层32与半导体多层结构体20的p型GaN类半导体区域的表面12接触。