发明申请
US20120331435A1 INTEGRATED CIRCUIT DESIGN USING THROUGH SILICON VIAS 有权
集成电路采用硅六角形设计

  • 专利标题: INTEGRATED CIRCUIT DESIGN USING THROUGH SILICON VIAS
  • 专利标题(中): 集成电路采用硅六角形设计
  • 申请号: US13170020
    申请日: 2011-06-27
  • 公开(公告)号: US20120331435A1
    公开(公告)日: 2012-12-27
  • 发明人: Arifur Rahman
  • 申请人: Arifur Rahman
  • 申请人地址: US CA San Jose
  • 专利权人: XILINX, INC.
  • 当前专利权人: XILINX, INC.
  • 当前专利权人地址: US CA San Jose
  • 主分类号: G06F17/50
  • IPC分类号: G06F17/50
INTEGRATED CIRCUIT DESIGN USING THROUGH SILICON VIAS
摘要:
A method of integrated circuit design using through silicon vias (TSVs) can include determining that a stress field to which a first active circuit element of a circuit block is exposed and a stress field to which a second active circuit element of the circuit block is exposed are mismatched. Mismatch between the stress field of the first active circuit element and the stress field of the second active circuit element can be reduced by modifying a layout of the die for a TSV.
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