发明申请
- 专利标题: INTEGRATED CIRCUIT DESIGN USING THROUGH SILICON VIAS
- 专利标题(中): 集成电路采用硅六角形设计
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申请号: US13170020申请日: 2011-06-27
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公开(公告)号: US20120331435A1公开(公告)日: 2012-12-27
- 发明人: Arifur Rahman
- 申请人: Arifur Rahman
- 申请人地址: US CA San Jose
- 专利权人: XILINX, INC.
- 当前专利权人: XILINX, INC.
- 当前专利权人地址: US CA San Jose
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
A method of integrated circuit design using through silicon vias (TSVs) can include determining that a stress field to which a first active circuit element of a circuit block is exposed and a stress field to which a second active circuit element of the circuit block is exposed are mismatched. Mismatch between the stress field of the first active circuit element and the stress field of the second active circuit element can be reduced by modifying a layout of the die for a TSV.
公开/授权文献
- US08560982B2 Integrated circuit design using through silicon vias 公开/授权日:2013-10-15