发明申请
US20130001499A1 Compressive Structure for Enhancing Contact of Phase Change Material Memory Cells
审中-公开
用于增强相变材料记忆单元接触的压缩结构
- 专利标题: Compressive Structure for Enhancing Contact of Phase Change Material Memory Cells
- 专利标题(中): 用于增强相变材料记忆单元接触的压缩结构
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申请号: US13171210申请日: 2011-06-28
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公开(公告)号: US20130001499A1公开(公告)日: 2013-01-03
- 发明人: Matthew J. Breitwisch , Chung H. Lam , Alejandro G. Schrott
- 申请人: Matthew J. Breitwisch , Chung H. Lam , Alejandro G. Schrott
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L45/00
- IPC分类号: H01L45/00 ; H01L21/06 ; H01L21/62
摘要:
A process for manufacturing a PCM device comprises forming a dielectric, producing a via in the dielectric starting at an area on the surface of the dielectric by forming a via opening in the area and extending the opening into the dielectric toward and then terminating at an electrode comprising a first electrode in the dielectric. We form a spacer layer contiguous with the side walls of the via and fill the via with a PCM. We then remove the surface of the dielectric to leave a PCM cusp at the opening of the via, cap the PCM cusp with a low density capping film; densify the PCM and capping film to obtain a high density capping film that exerts compressive pressure on the high density PCM in a direction toward the first electrode to enhance electrical contact between the PCM and the first electrode.