- 专利标题： SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
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申请号： US13609906申请日： 2012-09-11
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公开(公告)号： US20130001583A1公开(公告)日： 2013-01-03
- 发明人: Shunpei YAMAZAKI , Satoshi MURAKAMI , Jun KOYAMA , Yukio TANAKA , Hidehito KITAKADO , Hideto OHNUMA
- 申请人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Jun KOYAMA , Yukio TANAKA , Hidehito KITAKADO , Hideto OHNUMA
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 优先权： JP11-045558 19990223
- 主分类号： H01L29/786
- IPC分类号： H01L29/786
摘要：
This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.
公开/授权文献
- US08575619B2 Semiconductor device and fabrication method thereof 公开/授权日：2013-11-05
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