发明申请
US20130005099A1 METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE INCLUDING A DIELECTRIC LAYER
有权
用于生产包括介电层的半导体器件的方法
- 专利标题： METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE INCLUDING A DIELECTRIC LAYER
- 专利标题（中）： 用于生产包括介电层的半导体器件的方法
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申请号： US13537374申请日： 2012-06-29
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公开(公告)号： US20130005099A1公开(公告)日： 2013-01-03
- 发明人: Hans Weber , Franz Hirler , Andreas Meiser , Anton Mauder , Kurt Sorschag , Stefan Gamerith , Roman Knoefler
- 申请人： Hans Weber , Franz Hirler , Andreas Meiser , Anton Mauder , Kurt Sorschag , Stefan Gamerith , Roman Knoefler
- 申请人地址： AT Villach
- 专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人地址： AT Villach
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/20
摘要：
A semiconductor device with a dielectric layer is produced by providing a semiconductor body with a first trench extending into the semiconductor body, the first trench having a bottom and a sidewall. A first dielectric layer is formed on the sidewall in a lower portion of the first trench and a first plug is formed in the lower portion of the first trench so as to cover the first dielectric layer. The first plug leaves an upper portion of the sidewall uncovered. A sacrificial layer is formed on the sidewall in the upper portion of the first trench and a second plug is formed in the upper portion of the first trench. The sacrificial layer is removed so as to form a second trench having sidewalls and a bottom. A second dielectric layer is formed in the second trench and extends to the first dielectric layer.
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