发明申请
- 专利标题： ALL GRAPHENE FLASH MEMORY DEVICE
- 专利标题（中）： 所有GRAPHENE闪存存储器件
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申请号： US13180601申请日： 2011-07-12
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公开(公告)号： US20130015429A1公开(公告)日： 2013-01-17
- 发明人: Augustin J. Hong , Ji-Young Kim , Kang-Lung Wang
- 申请人： Augustin J. Hong , Ji-Young Kim , Kang-Lung Wang
- 申请人地址： US CA Oakland
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： US CA Oakland
- 主分类号： H01L29/12
- IPC分类号： H01L29/12
摘要：
A Graphene Flash Memory (GFM) device is disclosed. In general, the GFM device includes a number of memory cells, where each memory cell includes a graphene channel, a graphene storage layer, and a graphene electrode. In one embodiment, by using a graphene channel, graphene storage layer, and graphene electrode, the memory cells of the GFM device are enabled to be scaled down much more than memory cells of a conventional flash memory device. More specifically, in one embodiment, the GFM device has a feature size less than 25 nanometers, less than or equal to 20 nanometers, less than or equal to 15 nanometers, less than or equal to 10 nanometers, or less than or equal to 5 nanometers.
公开/授权文献
- US08772853B2 All graphene flash memory device 公开/授权日：2014-07-08
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