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    Uniformly distributed self-assembled solder dot formation for high efficiency solar cells
    3.
    发明授权
    Uniformly distributed self-assembled solder dot formation for high efficiency solar cells 有权
    用于高效率太阳能电池的均匀分布的自组装焊点形成

    公开(公告)号：US08841544B2

    公开(公告)日：2014-09-23

    申请号：US13611047

    申请日：2012-09-12

    Applicant: Augustin J. Hong ,  Jeehwan Kim ,  Jae-Woong Nah ,  Devendra K. Sadana

    Inventor： Augustin J. Hong ,  Jeehwan Kim ,  Jae-Woong Nah ,  Devendra K. Sadana

    IPC: H01L31/00

    CPC classification number: H01L31/02366 ,  C03C15/00 ,  C03C2218/34 ,  Y02E10/50

    Abstract: A substrate for photovoltaic device includes a textured surface formed from silicon-based material. The textured surface includes a plurality of cones uniformly distributed across the textured surface. The uniformly distributed cones are configured by etching from a top surface of the substrate using a self-assembled solder dot mask evaporated on the substrate prior to etching. The cones are uniformly distributed as a result of gettering a process chamber prior to forming the solder dot mask. The cones have a height/width ratio between about 1 to about 4, and the cones have a density between 108 to 109 cones/cm2.

    Abstract translation: 用于光伏器件的衬底包括由硅基材料形成的纹理表面。 纹理表面包括均匀分布在纹理化表面上的多个锥体。 均匀分布的锥体通过在蚀刻之前使用在衬底上蒸发的自组装焊点掩模从衬底的顶表面进行蚀刻而配置。 由于在形成焊点掩模之前吸收处理室，锥体均匀分布。 锥体具有约1至约4之间的高度/宽度比，并且锥体具有在108至109锥/ cm 2之间的密度。

    Self-aligned III-V MOSFET diffusion regions and silicide-like alloy contact
    4.
    发明授权
    Self-aligned III-V MOSFET diffusion regions and silicide-like alloy contact 有权
    自对准III-V MOSFET扩散区和硅化物样合金接触

    公开(公告)号：US08822317B2

    公开(公告)日：2014-09-02

    申请号：US13603739

    申请日：2012-09-05

    Applicant: Cheng-Wei Cheng ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana ,  Kuen-Ting Shiu

    Inventor： Cheng-Wei Cheng ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana ,  Kuen-Ting Shiu

    IPC: H01L21/336

    CPC classification number: H01L21/2258 ,  H01L21/246 ,  H01L21/28575 ,  H01L29/41775 ,  H01L29/452 ,  H01L29/517 ,  H01L29/66522

    Abstract: A metal oxide semiconductor field effect transistor and method for forming the same include exposing portions on a substrate adjacent to a gate stack, forming a dopant layer over the gate stack and in contact with the substrate in the portions exposed and annealing the dopant layer to drive dopants into the substrate to form self-aligned dopant regions in the substrate. The dopant layer is removed. A metal containing layer is deposited over the gate stack and in contact with the substrate in the exposed portions. The metal containing layer is annealed to drive metal into the substrate to form self-aligned contact regions in a metal alloy formed in the substrate within the dopant regions. The metal layer is then removed.

    Abstract translation: 金属氧化物半导体场效应晶体管及其形成方法包括在与栅极叠层相邻的衬底上的曝光部分，在栅极堆叠上形成掺杂剂层，并在暴露并退火掺杂剂层驱动的部分中与衬底接触 掺杂到衬底中以在衬底中形成自对准掺杂剂区域。 去除掺杂剂层。 在栅极叠层上沉积含金属层，并在暴露部分与衬底接触。 对含金属层进行退火以将金属驱动到衬底中，以在掺杂区域内的衬底中形成的金属合金中形成自对准接触区域。 然后去除金属层。

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