发明申请
US20130015532A1 METHODS OF MANUFACTURING GATES FOR PREVENTING SHORTS BETWEEN THE GATES AND SELF-ALIGNED CONTACTS AND SEMICONDUCTOR DEVICES HAVING THE SAME
有权
制造门以防止门和自对准接触器之间的短路的方法和具有该接触器的半导体器件
- 专利标题： METHODS OF MANUFACTURING GATES FOR PREVENTING SHORTS BETWEEN THE GATES AND SELF-ALIGNED CONTACTS AND SEMICONDUCTOR DEVICES HAVING THE SAME
- 专利标题（中）： 制造门以防止门和自对准接触器之间的短路的方法和具有该接触器的半导体器件
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申请号： US13182614申请日： 2011-07-14
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公开(公告)号： US20130015532A1公开(公告)日： 2013-01-17
- 发明人: Ju Youn Kim , Jedon Kim
- 申请人： Ju Youn Kim , Jedon Kim
- 主分类号： H01L29/772
- IPC分类号： H01L29/772 ; H01L21/28
摘要：
A method for manufacturing a semiconductor device, comprising forming a metal gate of a transistor on a substrate by a replacement metal gate process, wherein an insulating layer is formed on the substrate adjacent the metal gate, forming a hard mask on the substrate including the insulating layer and the metal gate, the hard mask including an opening exposing the metal gate, performing a metal pull back process on the substrate to remove a predetermined depth of a top portion of the metal gate, depositing a protective layer on the substrate, including on the hard mask and on top of a remaining portion of the metal gate, and performing chemical mechanical polishing to remove the hard mask and the protective layer, wherein the protective layer formed on top of the remaining portion of the metal gate remains.