发明申请
- 专利标题： REPLACEMENT METAL GATE STRUCTURE AND METHODS OF MANUFACTURE
- 专利标题（中）： 替代金属门结构和制造方法
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申请号： US13180842申请日： 2011-07-12
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公开(公告)号： US20130015580A1公开(公告)日： 2013-01-17
- 发明人: SAMEER H JAIN , Jeffrey B. Johnson , Ying Li , Hasan M. Nayfeh , Ravikumar Ramachandran
- 申请人： SAMEER H JAIN , Jeffrey B. Johnson , Ying Li , Hasan M. Nayfeh , Ravikumar Ramachandran
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L21/28
摘要：
A replacement metal gate structure and methods of manufacturing the same is provided. The method includes forming at least one trench structure and forming a liner of high-k dielectric material in the at least one trench structure. The method further includes adjusting a height of the liner of high-k dielectric material. The method further includes forming at least one workfunction metal over the liner, and forming a metal gate structure in the at least one trench structure, over the at least one workfunction metal and the liner of high-k dielectric material.
公开/授权文献
- US08642424B2 Replacement metal gate structure and methods of manufacture 公开/授权日：2014-02-04
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