发明申请
US20130020940A1 CURRENT LIMITER FOR HIGH VOLTAGE POWER SUPPLY USED WITH ION IMPLANTATION SYSTEM
有权
用于离子植入系统使用的高压电源的电流限制
- 专利标题： CURRENT LIMITER FOR HIGH VOLTAGE POWER SUPPLY USED WITH ION IMPLANTATION SYSTEM
- 专利标题（中）： 用于离子植入系统使用的高压电源的电流限制
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申请号： US13187905申请日： 2011-07-21
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公开(公告)号： US20130020940A1公开(公告)日： 2013-01-24
- 发明人: Klaus Becker , Klaus Petry , Piotr Lubicki
- 申请人： Klaus Becker , Klaus Petry , Piotr Lubicki
- 申请人地址： US MA Gloucester
- 专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人地址： US MA Gloucester
- 主分类号： H01J7/44
- IPC分类号： H01J7/44
摘要：
Disclosed is a surge protection system for use with an ion source assembly. The system comprises a high voltage power source coupled in series with a thermionic diode and an ion source assembly. The high voltage power supply is enclosed in the pressure tank and drives the ion source assembly. The thermionic diode is comprised of an insulating tube disposed between the ion source assembly enclosure and the output of the high voltage power supply and makes use of existing ion source assembly components to limit damage to the power supply during arc failures of the ion source assembly.
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