发明申请
- 专利标题: WIRING STRUCTURE, DISPLAY APPARATUS, AND SEMICONDUCTOR DEVICE
- 专利标题(中): 接线结构,显示设备和半导体器件
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申请号: US13639028申请日: 2011-03-30
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公开(公告)号: US20130026470A1公开(公告)日: 2013-01-31
- 发明人: Yasuaki Terao , Shinya Morita , Aya Miki , Katsufumi Tomihisa , Hiroshi Goto
- 申请人: Yasuaki Terao , Shinya Morita , Aya Miki , Katsufumi Tomihisa , Hiroshi Goto
- 申请人地址: JP Hyogo
- 专利权人: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
- 当前专利权人: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
- 当前专利权人地址: JP Hyogo
- 优先权: JP2010086485 20100402
- 国际申请: PCT/JP2011/058141 WO 20110330
- 主分类号: H01L29/16
- IPC分类号: H01L29/16
摘要:
Disclosed is a wiring structure that attains excellent low-contact resistance even if eliminating a barrier metal layer that normally is disposed between a Cu alloy wiring film and a semiconductor layer, and wiring structure with excellent adhesion. The wiring structure is provided with a semiconductor layer, and a Cu alloy layer, on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer, and the Cu alloy layer. The laminated structure is composed of a (N, C, F, O) layer which contains at least one element selected from among a group composed of nitrogen, carbon, fluorine, and oxygen, and a Cu—Si diffusion layer which includes Cu and Si, in this order from the substrate side. At least one element selected from among the group composed of nitrogen, carbon, fluorine, and oxygen that composes the (N, C, F, O) layer is bonded to Si in the semiconductor layer. The Cu alloy layer is a laminated structure containing a Cu—X alloy layer (a first layer) and a second layer.