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    Wiring structure, display apparatus, and semiconductor device
    1.
    发明授权
    Wiring structure, display apparatus, and semiconductor device 有权
    接线结构，显示装置和半导体器件

    公开(公告)号：US08598580B2

    公开(公告)日：2013-12-03

    申请号：US13639028

    申请日：2011-03-30

    申请人： Yasuaki Terao ,  Shinya Morita ,  Aya Miki ,  Katsufumi Tomihisa ,  Hiroshi Goto

    发明人： Yasuaki Terao ,  Shinya Morita ,  Aya Miki ,  Katsufumi Tomihisa ,  Hiroshi Goto

    IPC分类号： H01L29/16

    CPC分类号： H01L23/53238 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/3211 ,  H01L21/76867 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4958 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： Disclosed is a wiring structure that attains excellent low-contact resistance even if eliminating a barrier metal layer that normally is disposed between a Cu alloy wiring film and a semiconductor layer, and wiring structure with excellent adhesion. The wiring structure is provided with a semiconductor layer, and a Cu alloy layer, on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer, and the Cu alloy layer. The laminated structure is composed of a (N, C, F, O) layer which contains at least one element selected from among a group composed of nitrogen, carbon, fluorine, and oxygen, and a Cu—Si diffusion layer which includes Cu and Si, in this order from the substrate side. At least one element selected from among the group composed of nitrogen, carbon, fluorine, and oxygen that composes the (N, C, F, O) layer is bonded to Si in the semiconductor layer. The Cu alloy layer is a laminated structure containing a Cu—X alloy layer (a first layer) and a second layer.

    摘要翻译： 公开了即使消除通常设置在Cu合金布线膜和半导体层之间的阻挡金属层以及具有优异的粘附性的布线结构，也可以获得优异的低接触电阻的布线结构。 布线结构在基板上依次从基板侧设置有半导体层和Cu合金层。 在半导体层和Cu合金层之间包含层叠结构。 层叠结构由含有选自氮，碳，氟和氧中的至少一种元素的（N，C，F，O）层构成，Cu-Si扩散层包含Cu和 Si，从衬底侧依次。 构成（N，C，F，O）层的由氮，碳，氟和氧构成的组中的至少一种元素与半导体层中的Si键合。 Cu合金层是含有Cu-X合金层（第一层）和第二层的层叠结构。

    WIRING STRUCTURE, DISPLAY APPARATUS, AND SEMICONDUCTOR DEVICE
    2.
    发明申请
    WIRING STRUCTURE, DISPLAY APPARATUS, AND SEMICONDUCTOR DEVICE 有权
    接线结构，显示设备和半导体器件

    公开(公告)号：US20130026470A1

    公开(公告)日：2013-01-31

    申请号：US13639028

    申请日：2011-03-30

    申请人： Yasuaki Terao ,  Shinya Morita ,  Aya Miki ,  Katsufumi Tomihisa ,  Hiroshi Goto

    发明人： Yasuaki Terao ,  Shinya Morita ,  Aya Miki ,  Katsufumi Tomihisa ,  Hiroshi Goto

    IPC分类号： H01L29/16

    CPC分类号： H01L23/53238 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/3211 ,  H01L21/76867 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4958 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： Disclosed is a wiring structure that attains excellent low-contact resistance even if eliminating a barrier metal layer that normally is disposed between a Cu alloy wiring film and a semiconductor layer, and wiring structure with excellent adhesion. The wiring structure is provided with a semiconductor layer, and a Cu alloy layer, on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer, and the Cu alloy layer. The laminated structure is composed of a (N, C, F, O) layer which contains at least one element selected from among a group composed of nitrogen, carbon, fluorine, and oxygen, and a Cu—Si diffusion layer which includes Cu and Si, in this order from the substrate side. At least one element selected from among the group composed of nitrogen, carbon, fluorine, and oxygen that composes the (N, C, F, O) layer is bonded to Si in the semiconductor layer. The Cu alloy layer is a laminated structure containing a Cu—X alloy layer (a first layer) and a second layer.

    摘要翻译： 公开了即使消除通常设置在Cu合金布线膜和半导体层之间的阻挡金属层以及具有优异的粘附性的布线结构，也可以获得优异的低接触电阻的布线结构。 布线结构在基板上依次从基板侧设置有半导体层和Cu合金层。 在半导体层和Cu合金层之间包含层叠结构。 层叠结构由含有选自氮，碳，氟和氧中的至少一种元素的（N，C，F，O）层构成，Cu-Si扩散层包含Cu和 Si，从衬底侧依次。 构成（N，C，F，O）层的由氮，碳，氟和氧构成的组中的至少一种元素与半导体层中的Si键合。 Cu合金层是含有Cu-X合金层（第一层）和第二层的层叠结构。

    DISPLAY DEVICE, COPPER ALLOY FILM FOR USE THEREIN, AND COPPER ALLOY SPUTTERING TARGET
    5.
    发明申请
    DISPLAY DEVICE, COPPER ALLOY FILM FOR USE THEREIN, AND COPPER ALLOY SPUTTERING TARGET 审中-公开
    显示器件，铜合金膜及铜合金溅射靶

    公开(公告)号：US20110147753A1

    公开(公告)日：2011-06-23

    申请号：US13056444

    申请日：2009-08-14

    申请人： Takashi Onishi ,  Aya Miki ,  Hiroshi Goto ,  Masao Mizuno ,  Hirotaka Ito ,  Katsufumi Tomihisa

    发明人： Takashi Onishi ,  Aya Miki ,  Hiroshi Goto ,  Masao Mizuno ,  Hirotaka Ito ,  Katsufumi Tomihisa

    IPC分类号： H01L29/04 ,  B32B17/06

    CPC分类号： H01L23/53233 ,  C22C9/00 ,  C22C9/01 ,  H01L27/124 ,  H01L2924/0002 ,  Y10T428/265 ,  H01L2924/00

    摘要： Disclosed is a Cu alloy film for a display device that has high adhesion to a glass substrate while maintaining a low electric resistance characteristic of Cu-based materials. The Cu alloy film is wiring in direct contact with a glass substrate on a board and contains 0.1 to 10.0 atomic % in total of one or more elements selected from the group consisting of Ti, Al, and Mg. Also disclosed is a display device comprising a thin-film transistor that comprises the Cu alloy film. In a preferred embodiment of the display device, the thin-film transistor has a bottom gate-type structure, and a gate electrode and scanning lines in the thin-film transistor comprise the Cu alloy film and are in direct contact with the glass substrate.

    摘要翻译： 公开了一种用于显示装置的Cu合金膜，其在保持Cu基材料的低电阻特性的同时对玻璃基板具有高粘附性。 Cu合金膜是与板上的玻璃基板直接接触的布线，并且含有0.1〜10.0原子％的一种以上选自Ti，Al，Mg的元素。 还公开了包括包含Cu合金膜的薄膜晶体管的显示装置。 在显示装置的优选实施例中，薄膜晶体管具有底栅型结构，并且薄膜晶体管中的栅电极和扫描线包括Cu合金膜并与玻璃基板直接接触。

    INTERCONNECTION STRUCTURE, A THIN FILM TRANSISTOR SUBSTRATE, AND A MANUFACTURING METHOD THEREOF, AS WELL AS A DISPLAY DEVICE
    7.
    发明申请
    INTERCONNECTION STRUCTURE, A THIN FILM TRANSISTOR SUBSTRATE, AND A MANUFACTURING METHOD THEREOF, AS WELL AS A DISPLAY DEVICE 有权
    互连结构，薄膜晶体管基板及其制造方法，作为显示器件

    公开(公告)号：US20110024761A1

    公开(公告)日：2011-02-03

    申请号：US12936572

    申请日：2009-04-17

    申请人： Nobuyuki Kawakami ,  Mototaka Ochi ,  Aya Miki ,  Shinya Morita ,  Yoshihiro Yokota ,  Shinya Fukuma ,  Hiroshi Goto

    发明人： Nobuyuki Kawakami ,  Mototaka Ochi ,  Aya Miki ,  Shinya Morita ,  Yoshihiro Yokota ,  Shinya Fukuma ,  Hiroshi Goto

    IPC分类号： H01L33/16 ,  H01L21/20

    CPC分类号： H01L21/26506 ,  H01L21/2236 ,  H01L21/76829 ,  H01L21/76838 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66575 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a direct contact technology by which a barrier metal layer between an Al alloy interconnection composed of pure Al or an Al alloy and a semiconductor layer can be eliminated and the Al alloy interconnection can be directly and surely connected to the semiconductor layer within a wide process margin. In an interconnection structure, the semiconductor layer, and the Al alloy film composed of the pure Al or the Al alloy are provided on the substrate in this order from the substrate side. A multilayer structure of an (N, C, F) layer containing at least one type of an element selected from among a group composed of nitrogen, carbon and fluorine, and an Al—Si diffusion layer containing Al and Si is included in this order from the substrate side, between the semiconductor layer and the Al alloy film. At least the one type of the element, i.e., nitrogen, carbon or fluorine contained in the (N, C, F) layer is bonded with Si contained in the semiconductor layer.

    摘要翻译： 提供了一种直接接触技术，通过该技术可以消除由纯Al或Al合金构成的Al合金互连与半导体层之间的阻挡金属层，并且Al合金互连可以在宽的范围内直接且可靠地连接到半导体层 过程保证金 在互连结构中，从衬底侧依次从衬底上提供由纯Al或Al合金构成的半导体层和Al合金膜。 包含选自由氮，碳和氟组成的组中的至少一种元素和包含Al和Si的Al-Si扩散层的（N，C，F）层的多层结构按此顺序包括 从衬底侧在半导体层和Al合金膜之间。 （N，C，F）层中所含的至少一种元素即氮，碳或氟与包含在半导体层中的Si键合。

    Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device
    9.
    发明授权
    Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device 有权
    接线结构，薄膜晶体管基板，薄膜晶体管基板的制造方法以及显示装置

    公开(公告)号：US08535997B2

    公开(公告)日：2013-09-17

    申请号：US12999034

    申请日：2009-07-03

    申请人： Nobuyuki Kawakami ,  Shinya Fukuma ,  Aya Miki ,  Mototaka Ochi ,  Shinya Morita ,  Yoshihiro Yokota ,  Hiroshi Goto

    发明人： Nobuyuki Kawakami ,  Shinya Fukuma ,  Aya Miki ,  Mototaka Ochi ,  Shinya Morita ,  Yoshihiro Yokota ,  Hiroshi Goto

    IPC分类号： H01L21/84

    CPC分类号： H01L23/53238 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L21/28525 ,  H01L21/76843 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a direct contact technology by which a barrier metal layer between a Cu alloy wiring composed of pure Cu or a Cu alloy and a semiconductor layer can be eliminated, and the Cu alloy wiring can be directly and surely connected to the semiconductor layer within a wide process margin. The wiring structure is provided with the semiconductor layer and the Cu alloy film composed of pure Cu or the Cu alloy on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer and the Cu alloy film. The laminated structure is composed of an (N, C, F) layer, which contains at least one element selected from among a group composed of nitrogen, carbon and fluorine, and a Cu—Si diffusion layer, which contains Cu and Si, in this order from the substrate side. Furthermore, at least the one element selected from among the group composed of nitrogen, carbon and fluorine is bonded to Si contained in the semiconductor layer.

    摘要翻译： 提供一种直接接触技术，通过该技术可以消除由纯Cu或Cu合金构成的Cu合金布线与半导体层之间的阻挡金属层，并且Cu合金布线可以直接和可靠地连接到半导体层内 加工边缘宽 布线结构从衬底侧依次设置有半导体层和由纯Cu或Cu合金构成的Cu合金膜。 在半导体层和Cu合金膜之间包含层叠结构。 层叠结构由（N，C，F）层构成，其含有选自由氮，碳和氟组成的组中的至少一种元素，以及含有Cu和Si的Cu-Si扩散层， 这个顺序是从衬底一侧。 此外，至少从由氮，碳和氟组成的组中选择的一种元素与包含在半导体层中的Si键合。