公开(公告)号：US10468535B2

公开(公告)日：2019-11-05

申请号：US13636255

申请日：2011-04-07

申请人： Shinya Morita ,  Toshihiro Kugimiya ,  Takeaki Maeda ,  Satoshi Yasuno ,  Yasuaki Terao ,  Aya Miki

发明人： Shinya Morita ,  Toshihiro Kugimiya ,  Takeaki Maeda ,  Satoshi Yasuno ,  Yasuaki Terao ,  Aya Miki

IPC分类号： C23C14/34 ,  H01L29/786 ,  H01L21/02 ,  C23C14/08

摘要： Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W.

公开(公告)号：US08907334B2

公开(公告)日：2014-12-09

申请号：US13642314

申请日：2011-04-18

申请人： Aya Miki ,  Yumi Iwanari ,  Toshihiro Kugimiya ,  Shinya Morita ,  Yasuaki Terao ,  Satoshi Yasuno ,  Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn

发明人： Aya Miki ,  Yumi Iwanari ,  Toshihiro Kugimiya ,  Shinya Morita ,  Yasuaki Terao ,  Satoshi Yasuno ,  Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn

IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

摘要： Disclosed is an oxide for a semiconductor layer of a thin-film transistor, said oxide being excellent in the switching characteristics of a thin-film transistor, specifically enabling favorable characteristics to be stably obtained even in a region of which the ZnO concentration is high and even after forming a passivation layer and after applying stress. The oxide is used in a semiconductor layer of a thin-film transistor, and the aforementioned oxide contains Zn and Sn, and further contains at least one element selected from group X consisting of Al, Hf, Ta, Ti, Nb, Mg, Ga, and the rare-earth elements.

摘要翻译： 公开了一种用于薄膜晶体管的半导体层的氧化物，所述氧化物的薄膜晶体管的开关特性优异，特别是即使在ZnO浓度高的区域也能够稳定地获得良好的特性， 甚至在形成钝化层之后和施加应力之后。 氧化物用于薄膜晶体管的半导体层，上述氧化物含有Zn和Sn，还含有选自由Al，Hf，Ta，Ti，Nb，Mg，Ga组成的组X中的至少一种元素 ，和稀土元素。

公开(公告)号：US20130009111A1

公开(公告)日：2013-01-10

申请号：US13636255

申请日：2011-04-07

申请人： Shinya Morita ,  Toshihiro Kugiyama ,  Takeaki Maeda ,  Satoshi Yasuno ,  Yasuaki Terao ,  Aya Miki

发明人： Shinya Morita ,  Toshihiro Kugiyama ,  Takeaki Maeda ,  Satoshi Yasuno ,  Yasuaki Terao ,  Aya Miki

IPC分类号： H01B1/08 ,  C01G35/00 ,  C01G17/00 ,  C01G41/02 ,  C23C14/14 ,  C01B33/20 ,  C01G27/02 ,  C01G19/02 ,  C01G9/02 ,  C01G53/04 ,  C01G15/00

CPC分类号： H01L29/7869 ,  C23C14/08 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631

摘要： Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W.

摘要翻译： 公开了一种用于薄膜晶体管的半导体层的氧化物，当在包括半导体层中的氧化物半导体的薄膜晶体管中使用时，对晶体管赋予良好的开关特性和耐应力性。 具体公开了用于薄膜晶体管的半导体层的氧化物，其用于薄膜晶体管的半导体层，并且包含选自由In，Ga和Zn组成的组中的至少一种元素和至少一种元素选择 从由Al，Si，Ni，Ge，Sn，Hf，Ta和W组成的组X

公开(公告)号：US08299614B2

公开(公告)日：2012-10-30

申请号：US12936572

申请日：2009-04-17

申请人： Nobuyuki Kawakami ,  Mototaka Ochi ,  Aya Miki ,  Shinya Morita ,  Yoshihiro Yokota ,  Shinya Fukuma ,  Hiroshi Goto

发明人： Nobuyuki Kawakami ,  Mototaka Ochi ,  Aya Miki ,  Shinya Morita ,  Yoshihiro Yokota ,  Shinya Fukuma ,  Hiroshi Goto

IPC分类号： H01L23/48

CPC分类号： H01L21/26506 ,  H01L21/2236 ,  H01L21/76829 ,  H01L21/76838 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66575 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnection structure, containing a substrate and, in the following order from a side of the substrate: (I) a semiconductor layer; (II) a multilayer structure including (II-a) a first layer containing at least one type of an element selected from the group consisting of nitrogen, carbon and fluorine and (II-b) an Al—Si diffusion layer containing Al and Si; and (III) an Al film of pure Al or an Al alloy, wherein the at least one of element selected from the group consisting of nitrogen, carbon, and fluorine in the first layer is bonded with Si contained in the semiconductor layer.

摘要翻译： 一种互连结构，其包含基板，并且从所述基板的侧面按以下顺序：（I）半导体层; （II）包括（II-a）含有选自氮，碳和氟中的至少一种元素的第一层和（II-b）含有Al和Si的Al-Si扩散层的多层结构 ; 和（III）纯Al或Al合金的Al膜，其中在第一层中选自氮，碳和氟的至少一种元素与包含在半导体层中的Si结合。

公开(公告)号：US20110024761A1

公开(公告)日：2011-02-03

申请号：US12936572

申请日：2009-04-17

申请人： Nobuyuki Kawakami ,  Mototaka Ochi ,  Aya Miki ,  Shinya Morita ,  Yoshihiro Yokota ,  Shinya Fukuma ,  Hiroshi Goto

发明人： Nobuyuki Kawakami ,  Mototaka Ochi ,  Aya Miki ,  Shinya Morita ,  Yoshihiro Yokota ,  Shinya Fukuma ,  Hiroshi Goto

IPC分类号： H01L33/16 ,  H01L21/20

CPC分类号： H01L21/26506 ,  H01L21/2236 ,  H01L21/76829 ,  H01L21/76838 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66575 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a direct contact technology by which a barrier metal layer between an Al alloy interconnection composed of pure Al or an Al alloy and a semiconductor layer can be eliminated and the Al alloy interconnection can be directly and surely connected to the semiconductor layer within a wide process margin. In an interconnection structure, the semiconductor layer, and the Al alloy film composed of the pure Al or the Al alloy are provided on the substrate in this order from the substrate side. A multilayer structure of an (N, C, F) layer containing at least one type of an element selected from among a group composed of nitrogen, carbon and fluorine, and an Al—Si diffusion layer containing Al and Si is included in this order from the substrate side, between the semiconductor layer and the Al alloy film. At least the one type of the element, i.e., nitrogen, carbon or fluorine contained in the (N, C, F) layer is bonded with Si contained in the semiconductor layer.

摘要翻译： 提供了一种直接接触技术，通过该技术可以消除由纯Al或Al合金构成的Al合金互连与半导体层之间的阻挡金属层，并且Al合金互连可以在宽的范围内直接且可靠地连接到半导体层 过程保证金 在互连结构中，从衬底侧依次从衬底上提供由纯Al或Al合金构成的半导体层和Al合金膜。 包含选自由氮，碳和氟组成的组中的至少一种元素和包含Al和Si的Al-Si扩散层的（N，C，F）层的多层结构按此顺序包括 从衬底侧在半导体层和Al合金膜之间。 （N，C，F）层中所含的至少一种元素即氮，碳或氟与包含在半导体层中的Si键合。

公开(公告)号：US20110019350A1

公开(公告)日：2011-01-27

申请号：US12922965

申请日：2009-04-23

申请人： Junichi Nakai ,  Akira Nanbu ,  Hiroshi Goto ,  Hiroyuki Okuno ,  Aya Miki

发明人： Junichi Nakai ,  Akira Nanbu ,  Hiroshi Goto ,  Hiroyuki Okuno ,  Aya Miki

IPC分类号： H05K7/00 ,  C22C21/00 ,  C23C14/14

CPC分类号： H01L23/53219 ,  C23C14/185 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is an Al alloy film for a display device that, even when low-temperature heat treatment is applied, can realize satisfactorily low electric resistance, can realize a satisfactory reduction in contact resistance between the Al alloy film and a transparent pixel electrode connected directly to the Al alloy film, and has excellent corrosion resistance. The Al alloy film is connected directly to a transparent electroconductive film on the substrate in the display device. The Al alloy film comprises 0.05 to 0.5 atomic % of Co and 0.2 to 1.0 atomic % of Ge and satisfies the requirement that the content of Co and the content of Ge in the Al alloy film have a relationship represented by formula (1): [Ge]≧−0.25×[Co]+0.2 (1) In formula (1), [Ge] represents the content of Ge in the Al alloy film, atomic %; and [Co] represents the content of Co in the Al alloy film, atomic %.

摘要翻译： 公开了一种用于显示装置的Al合金膜，即使应用低温热处理也能够实现令人满意的低电阻，可以实现Al合金膜与直接连接的Al透明像素电极之间的接触电阻的令人满意的降低 Al合金膜，并具有优异的耐腐蚀性。 Al合金膜直接连接到显示装置中的基板上的透明导电膜。 Al合金膜包含0.05〜0.5原子％的Co和0.2〜1.0原子％的Ge，并且满足Al合金膜中的Co含量和Ge含量具有由式（1）表示的关系的要求：[ Ge]≥0.25×[Co] +0.2（1）式（1）中，[Ge]表示Al合金膜中Ge的含量，原子％ [Co]表示Al合金膜中Co的含量，原子％。

公开(公告)号：US20090242394A1

公开(公告)日：2009-10-01

申请号：US12414877

申请日：2009-03-31

申请人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Tomoya Kishi

发明人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Tomoya Kishi

IPC分类号： C23C14/34 ,  C21D1/00

CPC分类号： C23C14/3414 ,  C22C21/00 ,  C22F1/04

摘要： The present invention provides an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target capable of decreasing a generation of splashing in an initial stage of using the sputtering target, preventing defects caused thereby in interconnection films or the like and improving a yield and operation performance of an FPD, as well as a manufacturing method thereof. The invention relates to an Al-based alloy sputtering target which is an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target comprising at least one member selected from the group A (Ni, Co), at least one member selected from the group B (Cu, Ge), and at least one member selected from the group C (La, Gd, Nd) wherein a Vickers hardness (HV) thereof is 35 or more.

摘要翻译： 本发明提供能够在使用溅射靶的初始阶段减少飞溅产生的Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）合金溅射靶，从而防止由此引起的缺陷 在互连膜等中，提高FPD的成品率和操作性能，以及其制造方法。 本发明涉及一种Al基合金溅射靶，它是Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）合金溅射靶，其包含至少一种选自A ，Co），选自B族（Cu，Ge）中的至少一种以及选自维氏硬度（HV）为35以上的C（La，Gd，Nd）中的至少一种。

公开(公告)号：US20150255627A1

公开(公告)日：2015-09-10

申请号：US14721779

申请日：2015-05-26

申请人： Hiroshi GOTO ,  Aya MIKI ,  Tomoya KISHI ,  Kenta HIROSE ,  Shinya MORITA ,  Toshihiro KUGIMIYA

发明人： Hiroshi GOTO ,  Aya MIKI ,  Tomoya KISHI ,  Kenta HIROSE ,  Shinya MORITA ,  Toshihiro KUGIMIYA

IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L27/12

CPC分类号： H01L29/78693 ,  C23C14/08 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/78696

摘要： A thin film transistor containing at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate containing a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 8% or more and 30% or less; In: 25% or less, excluding 0%; Zn: 35% or more to 65% or less; and Sn: 5% or more to 30% or less.

摘要翻译： 至少在基板上至少含有栅极，栅极绝缘膜，氧化物半导体层，源极 - 漏极和钝化膜的薄膜晶体管。 氧化物半导体层是含有第一氧化物半导体层（IGZTO）和第二氧化物半导体层（IZTO）的层压体。 第二氧化物半导体层形成在栅极绝缘膜上，第一氧化物半导体层形成在第二氧化物半导体层和钝化膜之间。 各金属元素相对于第一氧化物半导体层中除氧以外的全部金属元素的总量的含量如下： Ga：8％以上且30％以下; 在：25％以下，不含0％; Zn：35％以上65％以下; 和Sn：5％以上至30％以下。

公开(公告)号：US08743307B2

公开(公告)日：2014-06-03

申请号：US13490978

申请日：2012-06-07

申请人： Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn ,  Sei-Yong Park ,  Jun Hyun Park ,  Gun Hee Kim ,  Ji Hun Lim ,  Kyoung Won Lee ,  Toshihiro Kugimiya ,  Aya Miki ,  Shinya Morita ,  Tomoya Kishi ,  Hiroaki Tao ,  Hiroshi Goto

发明人： Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn ,  Sei-Yong Park ,  Jun Hyun Park ,  Gun Hee Kim ,  Ji Hun Lim ,  Kyoung Won Lee ,  Toshihiro Kugimiya ,  Aya Miki ,  Shinya Morita ,  Tomoya Kishi ,  Hiroaki Tao ,  Hiroshi Goto

IPC分类号： G02F1/136

CPC分类号： H01L27/1225 ,  H01L29/7869

摘要： A display device includes a first substrate, a gate line disposed on the first substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and connected to a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode and a passivation layer disposed on the data line, in which the semiconductor layer is formed of an oxide semiconductor including indium, tin, and zinc. The indium is present in an amount of about 5 atomic percent (at %) to about 50 at %, and a ratio of the zinc to the tin is about 1.38 to about 3.88.

摘要翻译： 显示装置包括：第一基板，设置在第一基板上的栅极线，包括栅电极，设置在栅极线上的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线 并连接到源电极，设置在半导体层上并面对源电极的漏电极和设置在数据线上的钝化层，其中半导体层由包含铟，锡和锌的氧化物半导体形成。 铟以约5原子％（at％）至约50原子％的量存在，并且锌与锡的比例为约1.38至约3.88。

公开(公告)号：US20140091306A1

公开(公告)日：2014-04-03

申请号：US14116935

申请日：2012-03-12

申请人： Aya Miki ,  Toshihiro Kugimiya

发明人： Aya Miki ,  Toshihiro Kugimiya

IPC分类号： H01L27/12 ,  H01L29/49

CPC分类号： H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/7869

摘要： Provided is a technique that allows oxidation of Cu wires to be effectively prevented during plasma processing when forming a passivation film for a display device that utilizes an oxide semiconductor layer. This wiring structure comprises a semiconductor layer (oxide semiconductor) for a thin film transistor, a Cu alloy film (laminated structure comprising a first layer (X) and a second layer (Z)), and a passivation film that are formed on a substrate, starting from the substrate side. The first layer (X) is made of an element that exhibits low electrical resistivity, such as pure Cu; and the second layer contains a plasma-oxidation-resistance improving element. The second layer (Z) is directly connected, at least partially, to the passivation film.

摘要翻译： 提供一种技术，当形成利用氧化物半导体层的显示装置的钝化膜时，允许在等离子体处理期间有效地防止Cu线的氧化。 该布线结构包括用于薄膜晶体管的半导体层（氧化物半导体），Cu合金膜（包括第一层（X）和第二层（Z）的层压结构））和形成在衬底上的钝化膜 从基板侧开始。 第一层（X）由纯Cu表现出低电阻率的元素制成; 第二层含有抗氧化性改善元件。 至少部分地将第二层（Z）连接到钝化膜。