- 专利标题： SPLIT-GATE FLASH MEMORY EXHIBITING REDUCED INTERFERENCE
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申请号： US13189964申请日： 2011-07-25
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公开(公告)号： US20130026552A1公开(公告)日： 2013-01-31
- 发明人: Eng Huat Toh , Shyue Seng (Jason) Tan , Elgin Quek
- 申请人： Eng Huat Toh , Shyue Seng (Jason) Tan , Elgin Quek
- 专利权人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/788
摘要：
A split gate memory cell is fabricated with a dielectric spacer comprising a high-k material between the word gate and the memory gate stack. Embodiments include memory cells with a dielectric spacer comprising low-k and high-k layers. Other embodiments include memory cells with an air gap between the word gate and the memory gate stack.
公开/授权文献
- US09064803B2 Split-gate flash memory exhibiting reduced interference 公开/授权日：2015-06-23
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