发明申请
US20130026639A1 Method of fabricating dual damascene structures using a multilevel multiple exposure patterning scheme
审中-公开
使用多级多重曝光图案化方案制造双镶嵌结构的方法
- 专利标题： Method of fabricating dual damascene structures using a multilevel multiple exposure patterning scheme
- 专利标题（中）： 使用多级多重曝光图案化方案制造双镶嵌结构的方法
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申请号： US13615980申请日： 2012-09-14
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公开(公告)号： US20130026639A1公开(公告)日： 2013-01-31
- 发明人: John C. Arnold , Kuang-Jung Chen , Matthew E. Colburn , Dario L. Goldfarb , Stefan Harrar , Steven J. Holmes , Pushkara Varanasi
- 申请人： John C. Arnold , Kuang-Jung Chen , Matthew E. Colburn , Dario L. Goldfarb , Stefan Harrar , Steven J. Holmes , Pushkara Varanasi
- 申请人地址： US NY Amonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Amonk
- 主分类号： H01L21/428
- IPC分类号： H01L21/428 ; H01L23/48
摘要：
A method for fabricating a dual damascene structure includes providing a first photoresist layer coated on an underlying dielectric stack, exposing said first photoresist layer to a first predetermined pattern of light, coating a second photoresist layer onto the pre-exposed first photoresist layer, exposing said second photoresist layer to a second predetermined pattern of light, optionally post-exposure baking the multi-tiered photoresist layers and developing said photoresist layers to form a multi-tiered dual damascene structure in the photoresist layers.
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