公开(公告)号：US20130026639A1

公开(公告)日：2013-01-31

申请号：US13615980

申请日：2012-09-14

申请人： John C. Arnold ,  Kuang-Jung Chen ,  Matthew E. Colburn ,  Dario L. Goldfarb ,  Stefan Harrar ,  Steven J. Holmes ,  Pushkara Varanasi

发明人： John C. Arnold ,  Kuang-Jung Chen ,  Matthew E. Colburn ,  Dario L. Goldfarb ,  Stefan Harrar ,  Steven J. Holmes ,  Pushkara Varanasi

IPC分类号： H01L21/428 ,  H01L23/48

CPC分类号： H01L23/53295 ,  G03F7/091 ,  G03F7/38 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L2221/1021 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a dual damascene structure includes providing a first photoresist layer coated on an underlying dielectric stack, exposing said first photoresist layer to a first predetermined pattern of light, coating a second photoresist layer onto the pre-exposed first photoresist layer, exposing said second photoresist layer to a second predetermined pattern of light, optionally post-exposure baking the multi-tiered photoresist layers and developing said photoresist layers to form a multi-tiered dual damascene structure in the photoresist layers.

摘要翻译： 一种用于制造双镶嵌结构的方法包括提供涂覆在下面的电介质堆叠上的第一光致抗蚀剂层，将所述第一光致抗蚀剂层暴露于第一预定图案的光，将第二光致抗蚀剂层涂覆到预曝光的第一光致抗蚀剂层上， 第二光致抗蚀剂层到第二预定图案的光，任选地后曝光烘烤多层光致抗蚀剂层并显影所述光致抗蚀剂层以在光致抗蚀剂层中形成多层双镶嵌结构。