发明申请
- 专利标题： METHOD FOR MANUFACTURING NONVOLATILE MEMORY DEVICE
- 专利标题（中）： 制造非易失性存储器件的方法
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申请号： US13534673申请日： 2012-06-27
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公开(公告)号： US20130029431A1公开(公告)日： 2013-01-31
- 发明人: Shigeki TAKAHASHI , Kyoichi SUGURO , Junichi ITO , Yuichi OHSAWA , Hiroaki YODA
- 申请人： Shigeki TAKAHASHI , Kyoichi SUGURO , Junichi ITO , Yuichi OHSAWA , Hiroaki YODA
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-143417 20110628
- 主分类号： H01L21/306
- IPC分类号： H01L21/306
摘要：
According to one embodiment, a method for manufacturing a nonvolatile memory device including a plurality of memory cells is disclosed. Each of the plurality of memory cells includes a base layer including a first electrode, a magnetic tunnel junction device provided on the base layer, and a second electrode provided on the magnetic tunnel junction device. The magnetic tunnel junction device includes a first magnetic layer, a tunneling barrier layer provided on the first magnetic layer, and a second magnetic layer provided on the tunneling barrier layer. The method can include etching a portion of the second magnetic layer and a portion of the first magnetic layer by irradiating gas clusters onto a portion of a surface of the second magnetic layer or a portion of a surface of the first magnetic layer.
公开/授权文献
- US08981507B2 Method for manufacturing nonvolatile memory device 公开/授权日：2015-03-17
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