公开(公告)号：US20130029431A1

公开(公告)日：2013-01-31

申请号：US13534673

申请日：2012-06-27

申请人： Shigeki TAKAHASHI ,  Kyoichi SUGURO ,  Junichi ITO ,  Yuichi OHSAWA ,  Hiroaki YODA

发明人： Shigeki TAKAHASHI ,  Kyoichi SUGURO ,  Junichi ITO ,  Yuichi OHSAWA ,  Hiroaki YODA

IPC分类号： H01L21/306

CPC分类号： H01L43/12

摘要： According to one embodiment, a method for manufacturing a nonvolatile memory device including a plurality of memory cells is disclosed. Each of the plurality of memory cells includes a base layer including a first electrode, a magnetic tunnel junction device provided on the base layer, and a second electrode provided on the magnetic tunnel junction device. The magnetic tunnel junction device includes a first magnetic layer, a tunneling barrier layer provided on the first magnetic layer, and a second magnetic layer provided on the tunneling barrier layer. The method can include etching a portion of the second magnetic layer and a portion of the first magnetic layer by irradiating gas clusters onto a portion of a surface of the second magnetic layer or a portion of a surface of the first magnetic layer.

摘要翻译： 根据一个实施例，公开了一种用于制造包括多个存储单元的非易失性存储器件的方法。 多个存储单元中的每一个包括基底层，其包括第一电极，设置在基底层上的磁性隧道结器件和设置在磁性隧道结装置上的第二电极。 磁隧道结装置包括第一磁性层，设置在第一磁性层上的隧道势垒层，以及设置在隧道势垒层上的第二磁性层。 该方法可以包括通过将气体簇照射到第二磁性层的表面的一部分或第一磁性层的表面的一部分上来蚀刻第二磁性层的一部分和第一磁性层的一部分。

公开(公告)号：US20120074511A1

公开(公告)日：2012-03-29

申请号：US13231894

申请日：2011-09-13

申请人： Shigeki TAKAHASHI ,  Yuichi OHSAWA ,  Junichi ITO ,  Chikayoshi KAMATA ,  Saori KASHIWADA ,  Minoru AMANO ,  Hiroaki YODA

发明人： Shigeki TAKAHASHI ,  Yuichi OHSAWA ,  Junichi ITO ,  Chikayoshi KAMATA ,  Saori KASHIWADA ,  Minoru AMANO ,  Hiroaki YODA

IPC分类号： H01L27/22 ,  H01L43/12 ,  H01L43/02

CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.

摘要翻译： 根据实施例的磁存储器包括：包括作为存储元件的磁阻元件的至少一个存储单元，以及激励磁阻元件的第一和第二电极。 磁阻元件包括：具有与膜平面垂直的可变磁化方向的第一磁性层; 在第一磁性层上的隧道阻挡层; 以及隧道势垒层上的第二磁性层，并且具有与膜平面垂直的固定的磁化方向。 所述第一磁性层包括：第一区域; 以及围绕第一区域的第一区域外的第二区域，并且具有比第一区域小的垂直磁各向异性能量。 第二磁性层包括：第三区域; 以及第三区域外的第四区域，并且具有比第三区域小的垂直磁各向异性能量。

公开(公告)号：US20120230091A1

公开(公告)日：2012-09-13

申请号：US13426139

申请日：2012-03-21

申请人： Satoshi YANAGI ,  Eiji KITAGAWA ,  Masahiko NAKAYAMA ,  Jyunichi OZEKI ,  Hisanori AIKAWA ,  Naoharu SHIMOMURA ,  Masatoshi YOSHIKAWA ,  Minoru AMANO ,  Shigeki TAKAHASHI ,  Hiroaki YODA

发明人： Satoshi YANAGI ,  Eiji KITAGAWA ,  Masahiko NAKAYAMA ,  Jyunichi OZEKI ,  Hisanori AIKAWA ,  Naoharu SHIMOMURA ,  Masatoshi YOSHIKAWA ,  Minoru AMANO ,  Shigeki TAKAHASHI ,  Hiroaki YODA

IPC分类号： H01L29/82 ,  G11C11/15

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3286 ,  H01L43/08

摘要： According to one embodiment, a magnetic memory includes at least one memory cell including a magnetoresistive element, and first and second electrodes. The element includes a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and a third magnetic layer provided on the second magnetic layer and having a magnetization antiparallel to the magnetization direction of the second magnetic layer. A diameter of an upper surface of the first magnetic layer is smaller than that of a lower surface of the tunnel barrier layer. A diameter of a lower surface of the second magnetic layer is not more than that of an upper surface of the tunnel barrier layer.

摘要翻译： 根据一个实施例，磁存储器包括至少一个包括磁阻元件的存储单元以及第一和第二电极。 元件包括第一磁性层，隧道势垒层，第二磁性层和设置在第二磁性层上并且具有与第二磁性层的磁化方向反平行的磁化的第三磁性层。 第一磁性层的上表面的直径小于隧道势垒层的下表面的直径。 第二磁性层的下表面的直径不大于隧道势垒层的上表面的直径。

公开(公告)号：US20150069558A1

公开(公告)日：2015-03-12

申请号：US14203249

申请日：2014-03-10

申请人： Masahiko NAKAYAMA ,  Tadashi KAI ,  Masaru TOKO ,  Hiroaki YODA ,  Hyung Suk LEE ,  Jae Geun OH ,  Choon Kun RYU ,  Min Suk LEE

发明人： Masahiko NAKAYAMA ,  Tadashi KAI ,  Masaru TOKO ,  Hiroaki YODA ,  Hyung Suk LEE ,  Jae Geun OH ,  Choon Kun RYU ,  Min Suk LEE

IPC分类号： H01L43/02 ,  H01L43/12

CPC分类号： H01L43/02 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/5607 ,  H01L27/222 ,  H01L27/228 ,  H01L27/2463 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L45/04

摘要： According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metal material, a stacked body above the conductive layer, and including a first magnetization film containing a second metal material, a second magnetization film, and a tunnel barrier layer between the first magnetization film and the second magnetization film, and an insulating layer on a side face of the stacked body, and containing an oxide of the first metal material. The first magnetization film and/or the second magnetization film includes a first region positioned in a central portion, and a second region positioned in an edge portion and containing As, P, Ge, Ga, Sb, In, N, Ar, He, F, Cl, Br, I, Si, B, C, O, Zr, Tb, S, Se, or Ti.

摘要翻译： 根据一个实施例，公开了一种磁存储器。 该存储器包括一个包含第一金属材料的导电层，在该导电层上方的层叠体，并且包括一个第一磁化膜，该第一磁化膜含有第二金属材料，第二磁化膜和第一磁化膜与第二磁化膜之间的隧道势垒层 磁化膜和层叠体的侧面上的绝缘层，并且含有第一金属材料的氧化物。 第一磁化膜和/或第二磁化膜包括位于中心部分的第一区域和位于边缘部分中并且包含As，P，Ge，Ga，Sb，In，N，Ar，He的第二区域， F，Cl，Br，I，Si，B，C，O，Zr，Tb，S，Se或Ti。

公开(公告)号：US20150069552A1

公开(公告)日：2015-03-12

申请号：US14200894

申请日：2014-03-07

申请人： Yutaka HASHIMOTO ,  Tadashi KAI ,  Masahiko NAKAYAMA ,  Hiroaki YODA ,  Toshihiko NAGASE ,  Masatoshi YOSHIKAWA ,  Yasuyuki SONODA

发明人： Yutaka HASHIMOTO ,  Tadashi KAI ,  Masahiko NAKAYAMA ,  Hiroaki YODA ,  Toshihiko NAGASE ,  Masatoshi YOSHIKAWA ,  Yasuyuki SONODA

IPC分类号： H01L43/02 ,  H01L43/12

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/08

摘要： According to one embodiment, a magnetic memory device includes a magnetoresistance effect element having a structure in which a first magnetic layer, a nonmagnetic layer, a second magnetic layer, and a third magnetic layer are stacked, wherein the third magnetic layer comprises a first region and a plurality of second regions, and each of the second regions is surrounded by the first region, has conductivity, and has a greater magnetic property than the first region.

摘要翻译： 根据一个实施例，磁存储器件包括具有其中堆叠第一磁性层，非磁性层，第二磁性层和第三磁性层的结构的磁阻效应元件，其中第三磁性层包括第一区域 和多个第二区域，并且每个第二区域被第一区域包围，具有导电性，并且具有比第一区域更大的磁特性。

公开(公告)号：US20130056349A1

公开(公告)日：2013-03-07

申请号：US13600812

申请日：2012-08-31

申请人： Eiji KITAGAWA ,  Tadaomi DAIBOU ,  Kenji NOMA ,  Tadashi KAI ,  Koji YAMAKAWA ,  Toshihiko NAGASE ,  Katsuya NISHIYAMA ,  Koji UEDA ,  Daisuke WATANABE ,  Hiroaki YODA ,  Satoru SANO ,  Yoshihiro NISHIMURA ,  Takayuki WATANABE ,  Yuzo KATO ,  Akira UEKI

发明人： Eiji KITAGAWA ,  Tadaomi DAIBOU ,  Kenji NOMA ,  Tadashi KAI ,  Koji YAMAKAWA ,  Toshihiko NAGASE ,  Katsuya NISHIYAMA ,  Koji UEDA ,  Daisuke WATANABE ,  Hiroaki YODA ,  Satoru SANO ,  Yoshihiro NISHIMURA ,  Takayuki WATANABE ,  Yuzo KATO ,  Akira UEKI

IPC分类号： C23C14/08 ,  C23C14/35

CPC分类号： C23C14/082 ,  C23C14/3414 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

摘要： Provided are a sputtering target including a target main body 10 that has MgO as a main component and a thickness of 3 mm or smaller, and a method of manufacturing a magnetic memory using the sputtering target which improves an MR ratio.

摘要翻译： 提供一种溅射靶，其包括具有MgO作为主要成分并且厚度为3mm以下的靶主体10以及使用该溅射靶的磁性存储器的制造方法，其提高MR比。

公开(公告)号：US20130069184A1

公开(公告)日：2013-03-21

申请号：US13618410

申请日：2012-09-14

申请人： Hisanori AIKAWA ,  Hiroaki YODA ,  Masahiko NAKAYAMA ,  Tatsuya KISHI ,  Sumio IKEGAWA

发明人： Hisanori AIKAWA ,  Hiroaki YODA ,  Masahiko NAKAYAMA ,  Tatsuya KISHI ,  Sumio IKEGAWA

IPC分类号： H01L29/82 ,  H01L21/8246

CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/08

摘要： According to one embodiment, a magnetoresistive element comprises a first magnetic layer, in which a magnetization direction is variable and is perpendicular to a film surface, a tunnel barrier layer that is formed on the first magnetic layer, and a second magnetic layer that is formed on the tunnel barrier layer, a magnetization direction of the second magnetic layer being variable and being perpendicular to the film surface. The second magnetic layer comprises a body layer that constitutes an origin of perpendicular magnetic anisotropy, and an interface layer that is formed between the body layer and the tunnel barrier layer. The interface layer has a permeability higher than that of the body layer and a planar size larger than that of the body layer.

摘要翻译： 根据一个实施例，磁阻元件包括其中磁化方向可变并且垂直于膜表面的第一磁性层，形成在第一磁性层上的隧道势垒层和形成的第二磁性层 在隧道势垒层上，第二磁性层的磁化方向是可变的并垂直于膜表面。 第二磁性层包括构成垂直磁各向异性的原点的主体层以及形成在主体层与隧道势垒层之间的界面层。 界面层的透过率比体层高，平面尺寸比体层大。

公开(公告)号：US20080158737A1

公开(公告)日：2008-07-03

申请号：US12042166

申请日：2008-03-04

申请人： Yuuzo KAMIGUCHI ,  Hiromi YUASA ,  Tomohiko NAGATA ,  Hiroaki YODA

发明人： Yuuzo KAMIGUCHI ,  Hiromi YUASA ,  Tomohiko NAGATA ,  Hiroaki YODA

IPC分类号： G11B5/33

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  G11C11/15

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, if a pinned layer and a free layer have a stacked construction of a magnetic layer and a non-magnetic layer or a stacked construction of a magnetic layer and a magnetic layer, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

摘要翻译： 提供了一种具有适当的电阻值的实用磁阻效应元件，其可以被敏化并且具有少量的要控制的磁性层，以及使用该电阻的磁头和磁记录和/或再现系统。 在其中使感应电流在垂直于膜的平面的方向上流动的磁阻效应元件中，如果被钉扎层和自由层具有磁性层和非磁性层的层叠结构或堆叠结构 的磁性层和磁性层，可以提供具有适当的电阻值的实用的磁阻效应元件，其可以被敏化并且具有少量的磁性层，同时有效地利用依赖于旋转的散射效应 。

公开(公告)号：US20160163968A1

公开(公告)日：2016-06-09

申请号：US15041722

申请日：2016-02-11

申请人： Koji UEDA ,  Toshihiko NAGASE ,  Kazuya SAWADA ,  Youngmin EEH ,  Daisuke WATANABE ,  Hiroaki YODA

发明人： Koji UEDA ,  Toshihiko NAGASE ,  Kazuya SAWADA ,  Youngmin EEH ,  Daisuke WATANABE ,  Hiroaki YODA

IPC分类号： H01L43/10 ,  H01L43/02

CPC分类号： H01L43/10 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

摘要： According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer.

公开(公告)号：US20150325785A1

公开(公告)日：2015-11-12

申请号：US14807267

申请日：2015-07-23

申请人： Masahiko NAKAYAMA ,  Masatoshi YOSHIKAWA ,  Tadashi KAI ,  Yutaka HASHIMOTO ,  Masaru TOKO ,  Hiroaki YODA ,  Jae Geun OH ,  Keum Bum LEE ,  Choon Kun RYU ,  Hyung Suk LEE ,  Sook Joo KIM

发明人： Masahiko NAKAYAMA ,  Masatoshi YOSHIKAWA ,  Tadashi KAI ,  Yutaka HASHIMOTO ,  Masaru TOKO ,  Hiroaki YODA ,  Jae Geun OH ,  Keum Bum LEE ,  Choon Kun RYU ,  Hyung Suk LEE ,  Sook Joo KIM

IPC分类号： H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

CPC分类号： H01L43/02 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.