发明申请
US20130032897A1 MOSFET GATE ELECTRODE EMPLOYING ARSENIC-DOPED SILICON-GERMANIUM ALLOY LAYER
审中-公开
使用砷化硅 - 锗合金层的MOSFET栅极电极
- 专利标题： MOSFET GATE ELECTRODE EMPLOYING ARSENIC-DOPED SILICON-GERMANIUM ALLOY LAYER
- 专利标题（中）： 使用砷化硅 - 锗合金层的MOSFET栅极电极
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申请号： US13196106申请日： 2011-08-02
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公开(公告)号： US20130032897A1公开(公告)日： 2013-02-07
- 发明人: Vijay Narayanan , Christopher V. Baiocco , Weipeng Li , Helen Wang
- 申请人： Vijay Narayanan , Christopher V. Baiocco , Weipeng Li , Helen Wang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/78
摘要：
A stack of a gate dielectric layer, a metallic material layer, an amorphous silicon-germanium alloy layer, and an amorphous silicon layer is deposited on a semiconductor substrate. In one embodiment, the amorphous silicon-germanium alloy layer is deposited as an in-situ amorphous arsenic-doped silicon-germanium alloy layer. In another embodiment, the amorphous silicon-germanium alloy layer is deposited as intrinsic semiconductor material layer, and arsenic is subsequently implanted into the amorphous silicon-germanium alloy layer. The stack is patterned and annealed to form a gate electrode.
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