发明申请
- 专利标题： GROUP III NITRIDE COMPOSITE SUBSTRATE
- 专利标题（中）： 第III组氮化物复合基板
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申请号： US13641582申请日： 2011-11-07
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公开(公告)号： US20130032928A1公开(公告)日： 2013-02-07
- 发明人: Issei Satoh , Hiroaki Yoshida , Yoshiyuki Yamamoto , Akihiro Hachigo , Hideki Matsubara
- 申请人： Issei Satoh , Hiroaki Yoshida , Yoshiyuki Yamamoto , Akihiro Hachigo , Hideki Matsubara
- 申请人地址： JP Osaka-shi, Osaka
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JP Osaka-shi, Osaka
- 优先权： JP2010-253645 20101112; JP2011-210704 20110927
- 国际申请： PCT/JP2011/075591 WO 20111107
- 主分类号： H01L29/20
- IPC分类号： H01L29/20
摘要：
A group III nitride composite substrate includes a support substrate, an oxide film formed on the support substrate, and a group III nitride layer formed on the oxide film. The oxide film may be a film selected from the group consisting of a TiO2 film and a SrTiO3 film, and an impurity may be added to the oxide film. Accordingly, the group III nitride composite substrate having a high bonding strength between the support substrate and the group III nitride layer is provided.
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