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    PROTECTIVE-FILM-ATTACHED COMPOSITE SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    1.
    发明申请
    PROTECTIVE-FILM-ATTACHED COMPOSITE SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    保护膜连接的复合基板及制造半导体器件的方法

    公开(公告)号：US20130168693A1

    公开(公告)日：2013-07-04

    申请号：US13820599

    申请日：2012-02-13

    申请人： Issei Satoh ,  Hiroaki Yoshida ,  Yoshiyuki Yamamoto ,  Akihiro Hachigo ,  Hideki Matsubara

    发明人： Issei Satoh ,  Hiroaki Yoshida ,  Yoshiyuki Yamamoto ,  Akihiro Hachigo ,  Hideki Matsubara

    IPC分类号： H01L29/20 ,  H01L21/02

    CPC分类号： H01L29/2003 ,  H01L21/02104 ,  H01L21/76254

    摘要： A protective-film-attached composite substrate includes a support substrate, an oxide film disposed on the support substrate, a semiconductor layer disposed on the oxide film, and a protective film protecting the oxide film by covering a portion that is a part of the oxide film and covered with none of the support substrate and the semiconductor layer. A method of manufacturing a semiconductor device includes the steps of: preparing the protective-film-attached composite substrate; and epitaxially growing, on the semiconductor layer of the protective-film-attached composite substrate, at least one functional semiconductor layer causing an essential function of a semiconductor device to be performed. Thus, there are provided a protective-film-attached composite substrate having a large effective region where a high-quality functional semiconductor layer can be epitaxially grown, and a method of manufacturing a semiconductor device in which the protective-film-attached composite substrate is used.

    摘要翻译： 保护膜附着复合基板包括支撑基板，设置在支撑基板上的氧化膜，设置在氧化膜上的半导体层，以及通过覆盖作为氧化物的一部分的部分来保护氧化膜的保护膜 并且不覆盖支撑基板和半导体层。 制造半导体器件的方法包括以下步骤：制备保护膜附着复合衬底; 并且在保护膜附着复合衬底的半导体层上外延生长至少一个引起半导体器件的基本功能的功能半导体层。 因此，提供了可以外延生长高品质功能半导体层的具有大的有效区域的保护膜附着复合基板，以及制造其中保护膜附着复合基板的半导体器件的制造方法 用过的。

    GROUP III NITRIDE COMPOSITE SUBSTRATE
    2.
    发明申请
    GROUP III NITRIDE COMPOSITE SUBSTRATE 审中-公开
    第III组氮化物复合基板

    公开(公告)号：US20130032928A1

    公开(公告)日：2013-02-07

    申请号：US13641582

    申请日：2011-11-07

    申请人： Issei Satoh ,  Hiroaki Yoshida ,  Yoshiyuki Yamamoto ,  Akihiro Hachigo ,  Hideki Matsubara

    发明人： Issei Satoh ,  Hiroaki Yoshida ,  Yoshiyuki Yamamoto ,  Akihiro Hachigo ,  Hideki Matsubara

    IPC分类号： H01L29/20

    CPC分类号： H01L21/76254 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/0254

    摘要： A group III nitride composite substrate includes a support substrate, an oxide film formed on the support substrate, and a group III nitride layer formed on the oxide film. The oxide film may be a film selected from the group consisting of a TiO2 film and a SrTiO3 film, and an impurity may be added to the oxide film. Accordingly, the group III nitride composite substrate having a high bonding strength between the support substrate and the group III nitride layer is provided.

    摘要翻译： III族氮化物复合衬底包括支撑衬底，形成在支撑衬底上的氧化物膜和形成在氧化物膜上的III族氮化物层。 氧化物膜可以是选自TiO 2膜和SrTiO 3膜的膜，并且可以向氧化物膜中添加杂质。 因此，提供了在支撑基板和III族氮化物层之间具有高结合强度的III族氮化物复合基板。

    Light-Emitting Device Substrate
    4.
    发明申请
    Light-Emitting Device Substrate 审中-公开
    发光器件基板

    公开(公告)号：US20110272734A1

    公开(公告)日：2011-11-10

    申请号：US13144696

    申请日：2009-11-11

    申请人： Akihiro Hachigo ,  Takao Nakamura ,  Masashi Yoshimura

    发明人： Akihiro Hachigo ,  Takao Nakamura ,  Masashi Yoshimura

    IPC分类号： H01L33/30

    CPC分类号： C30B25/18 ,  C30B29/403 ,  H01L33/007

    摘要： The present invention is a minimal-defect light-emitting device substrate that enables emitted light to issue from a device's substrate side, and is a light-emitting device 100 substrate furnished with a transparent substrate 10 that is transparent to light of wavelengths between 400 nm and 600 nm, inclusive, and a nitride-based compound semiconductor thin film 1c formed onto one of the major surfaces of the transparent substrate 10 by a join. Letting the thermal expansion coefficient of the transparent substrate along a direction perpendicular to the major surface of the transparent substrate be α1, and the thermal expansion coefficient of the nitride-based compound semiconductor thin film be α2, then (α1−α2)/α2 is between −0.5 and 1.0, inclusive, and at up to 1200° C. the transparent substrate does not react with the nitride-based compound semiconductor thin film 1c. The absolute index of refraction of the transparent substrate 10 preferably is between 60% and 140%, inclusive, of the absolute index of refraction of the nitride-based compound semiconductor thin film.

    摘要翻译： 本发明是一种使发射光能够从器件的衬底侧发出的最小缺陷发光器件衬底，并且是配备透明衬底10的发光器件100衬底，透明衬底10对波长在400nm之间的光是透明的 和600nm，以及通过接合形成在透明基板10的一个主表面上的氮化物系化合物半导体薄膜1c。 使透明基板沿着与透明基板的主面垂直的方向的热膨胀系数为α1，氮化物系化合物半导体薄膜的热膨胀系数为α2，则α1-α2/α2为 在-0.5和1.0之间，并且在高达1200℃下，透明衬底不与氮化物基化合物半导体薄膜1c反应。 透明基板10的绝对折射率优选在氮化物系化合物半导体薄膜的绝对折射率的60％〜140％的范围内。

    SUBSTRATE HAVING THIN FILM OF GaN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    6.
    发明申请
    SUBSTRATE HAVING THIN FILM OF GaN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
    具有GaN的薄膜的衬底及其制造方法以及GaN基半导体器件及其制造方法

    公开(公告)号：US20100210089A1

    公开(公告)日：2010-08-19

    申请号：US12765357

    申请日：2010-04-22

    申请人： Hitoshi KASAI ,  Akihiro Hachigo ,  Yoshiki Miura ,  Katsushi Akita

    发明人： Hitoshi KASAI ,  Akihiro Hachigo ,  Yoshiki Miura ,  Katsushi Akita

    IPC分类号： H01L21/30

    CPC分类号： H01L22/26 ,  H01L21/187 ,  H01L21/76251 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/0075 ,  H01L2924/0002 ,  H01L2924/00

    摘要： There is provided a method of producing a thin GaN film-joined substrate, including the steps of: joining on a GaN bulk crystalline body a substrate different in type or chemical composition from GaN; and dividing the GaN bulk crystalline body at a plane having a distance of at least 0.1 μm and at most 100 μm from an interface thereof with the substrate different in type, to provide a thin film of GaN on the substrate different in type, wherein the GaN bulk crystalline body had a surface joined to the substrate different in type, that has a maximum surface roughness Rmax of at most 20 μm. Thus a GaN-based semiconductor device including a thin GaN film-joined substrate including a substrate different in type and a thin film of GaN joined firmly on the substrate different in type, and at least one GaN-based semiconductor layer deposited on the thin film of GaN, can be fabricated at low cost.

    摘要翻译： 提供了一种制造薄GaN膜接合衬底的方法，包括以下步骤：将GaN体结构体与GaN的类型或化学组成不同的衬底接合; 并且将GaN本体结晶体在距离其不同类型的衬底的界面至少0.1μm至多100μm的平面处分割，以在衬底上提供类型不同的GaN薄膜，其中， GaN体结晶体具有与不同类型的基板接合的表面，其最大表面粗糙度Rmax至多为20μm。 因此，包括具有类型不同的衬底的薄GaN接合衬底和GaN的薄膜牢固地连接在不同类型的衬底上的GaN基半导体器件和沉积在薄膜上的至少一个GaN基半导体层 的GaN，可以以低成本制造。

    GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    7.
    发明申请
    GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    III族氮化物衬底，外延层基板，其制造方法和制造半导体器件的方法

    公开(公告)号：US20100187540A1

    公开(公告)日：2010-07-29

    申请号：US12445681

    申请日：2007-10-09

    申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

    发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

    IPC分类号： H01L29/20 ,  H01L21/306 ,  H01L21/20

    CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02024 ,  H01L33/16 ,  H01L33/32

    摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface is not more than 3×1013, and a haze level of the surface is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid, material per square centimeter of a surface is not more than 2×1014, and a haze level of the surface is not more than 5 ppm.

    摘要翻译： 可以形成能够形成质量良好的外延生长层的III族氮化物衬底及其制造方法。 GaN衬底是以下之一：III族氮化物衬底，其中每平方厘米表面的酸性材料的原子数不大于2×1014，并且每平方厘米表面的硅原子数 不超过3×1013; III族氮化物衬底，其中每平方厘米表面的硅原子数不大于3×1013，并且表面的雾度不大于5ppm; 和III族氮化物衬底，其中酸的原子数，每平方厘米表面的材料不大于2×1014，并且表面的雾度不大于5ppm。

    Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same
    8.
    发明授权
    Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same 有权
    接合有GaN的薄膜的基板及其制造方法，以及GaN系半导体器件及其制造方法

    公开(公告)号：US07728348B2

    公开(公告)日：2010-06-01

    申请号：US11819574

    申请日：2007-06-28

    申请人： Hitoshi Kasai ,  Akihiro Hachigo ,  Yoshiki Miura ,  Katsushi Akita

    发明人： Hitoshi Kasai ,  Akihiro Hachigo ,  Yoshiki Miura ,  Katsushi Akita

    IPC分类号： H01L27/15

    CPC分类号： H01L22/26 ,  H01L21/187 ,  H01L21/76251 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/0075 ,  H01L2924/0002 ,  H01L2924/00

    摘要： There is provided a method of producing a thin GaN film-joined substrate, including the steps of: joining on a GaN bulk crystalline body a substrate different in type or chemical composition from GaN; and dividing the GaN bulk crystalline body at a plane having a distance of at least 0.1 μm and at most 100 μm from an interface thereof with the substrate different in type, to provide a thin film of GaN on the substrate different in type, wherein the GaN bulk crystalline body had a surface joined to the substrate different in type, that has a maximum surface roughness Rmax of at most 20 μm. Thus a GaN-based semiconductor device including a thin GaN film-joined substrate including a substrate different in type and a thin film of GaN joined firmly on the substrate different in type, and at least one GaN-based semiconductor layer deposited on the thin film of GaN, can be fabricated at low cost.

    摘要翻译： 提供了一种制造薄GaN膜接合衬底的方法，包括以下步骤：将GaN体结构体与GaN的类型或化学组成不同的衬底接合; 并且将GaN本体结晶体在距离其不同类型的衬底的界面至少0.1μm至多100μm的平面处分割，以在衬底上提供类型不同的GaN薄膜，其中， GaN体结晶体具有与不同类型的基板接合的表面，其最大表面粗糙度Rmax至多为20μm。 因此，包括具有类型不同的衬底的薄GaN接合衬底和GaN的薄膜牢固地连接在不同类型的衬底上的GaN基半导体器件和沉积在薄膜上的至少一个GaN基半导体层 的GaN，可以以低成本制造。

    Gallium Nitride Substrate, and Gallium-Nitride-Substrate Testing and Manufacturing Methods
    9.
    发明申请
    Gallium Nitride Substrate, and Gallium-Nitride-Substrate Testing and Manufacturing Methods 有权
    氮化镓衬底和氮化镓衬底测试和制造方法

    公开(公告)号：US20070228521A1

    公开(公告)日：2007-10-04

    申请号：US11686364

    申请日：2007-03-15

    申请人： Akihiro Hachigo

    发明人： Akihiro Hachigo

    IPC分类号： H01L29/30

    CPC分类号： H01L21/02005 ,  C30B29/406 ,  C30B33/08 ,  H01L22/12 ,  H01L2924/0002 ,  Y10S438/959 ,  H01L2924/00

    摘要： Fracture-resistant gallium nitride substrate, and methods of testing for and manufacturing such substrates are made available. A gallium nitride substrate (10) is provided with a front side (12) polished to a mirrorlike finish, a back side (14) on the substrate side that is the opposite of the front side (12). A damaged layer (16) whose thickness d is 30 μm or less is formed on the back side (14). Given that the strength of the front side (12) is I1 and the strength of the back side (14) is I2, then the ratio I2/I1 is 0.46 or more.

    摘要翻译： 耐破坏氮化镓衬底，以及测试和制造这种衬底的方法是可用的。 氮化镓衬底（10）设置有抛光到镜面光洁度的前侧（12），在衬底侧的与前侧（12）相反的背面（14）。 在背面（14）上形成厚度d为30μm以下的受损层（16）。 假设前侧（12）的强度为I 1，背面（14）的强度为I 2 2，则比率I 2 1 为0.46以上。