- 专利标题： SELF-ALIGNED FINE PITCH PERMANENT ON-CHIP INTERCONNECT STRUCTURES AND METHOD OF FABRICATION
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申请号： US13197325申请日： 2011-08-03
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公开(公告)号： US20130032945A1公开(公告)日： 2013-02-07
- 发明人: Qinghuang Lin , Sanjay Mehta , Hosadurga Shobha
- 申请人： Qinghuang Lin , Sanjay Mehta , Hosadurga Shobha
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; H01L21/768
摘要：
An interconnect structure and methods for making the same include sidewall portions of an interlevel dielectric layer. The sidewall portions have a width less than a minimum feature size for a given lithographic technology and the width is formed by a thickness of the interlevel dielectric layer when conformally formed on vertical surfaces of a mandrel. The sidewall portions form spaced-apart openings. Conductive structures fill the spaced-apart openings and are separated by the sidewall portions to form single damascene structures.
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