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    Interconnect structure with an oxygen-doped SiC antireflective coating and method of fabrication
    5.
    发明授权
    Interconnect structure with an oxygen-doped SiC antireflective coating and method of fabrication 有权
    具有氧掺杂的SiC抗反射涂层的互连结构和制造方法

    公开(公告)号：US08373271B2

    公开(公告)日：2013-02-12

    申请号：US12788912

    申请日：2010-05-27

    申请人： Dario L. Goldfarb ,  Ranee W. Kwong ,  Qinghuang Lin ,  Deborah A. Neumayer ,  Hosadurga Shobha

    发明人： Dario L. Goldfarb ,  Ranee W. Kwong ,  Qinghuang Lin ,  Deborah A. Neumayer ,  Hosadurga Shobha

    IPC分类号： H01L23/532

    CPC分类号： H01L21/76802 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/76808 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53271 ,  H01L23/53276 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： An interconnect structure is provided that includes at least one patterned and cured photo-patternable low k material located on a surface of a patterned and cured oxygen-doped SiC antireflective coating (ARC). A conductively filled region is located within the at least one patterned and cured photo-patternable low k material and the patterned and cured oxygen-doped SiC ARC. The oxygen-doped SiC ARC, which is a thin layer (i.e., less than 400 angstroms), does not produce standing waves that may degrade the diffusion barrier and the electrically conductive feature that are embedded within the patterned and cured photo-patternable low k dielectric material and, as such, structural integrity is maintained. Furthermore, since a thin oxygen-doped SiC ARC is employed, the plasma etch process time used to open the material stack of the ARC/dielectric cap can be reduced, thus reducing potential plasma damage to the patterned and cured photo-patternable low k material. Also, the oxygen-doped SiC ARC can withstand current BEOL processing conditions.

    摘要翻译： 提供了一种互连结构，其包括位于图案化和固化的氧掺杂的SiC抗反射涂层（ARC）的表面上的至少一个图案化和固化的可光图案化的低k材料。 导电填充区域位于至少一个图案化和固化的可光图案化低k材料和图案化和固化的氧掺杂SiC ARC内。 作为薄层（即，小于400埃）的氧掺杂SiC ARC不产生可能降解扩散阻挡层和嵌入图案化和固化的可光图案化低k内的导电特征的驻波 介电材料，因此，维持结构完整性。 此外，由于采用薄的氧掺杂SiC ARC，所以可以减少用于打开ARC /电介质盖的材料堆叠的等离子体蚀刻处理时间，从而减少图案化和固化的可光图案化的低k材料的潜在的等离子体损伤 。 此外，氧掺杂的SiC ARC可以承受当前的BEOL加工条件。

    INTERCONNECT STRUCTURE WITH AN OXYGEN-DOPED SiC ANTIREFLECTIVE COATING AND METHOD OF FABRICATION
    6.
    发明申请
    INTERCONNECT STRUCTURE WITH AN OXYGEN-DOPED SiC ANTIREFLECTIVE COATING AND METHOD OF FABRICATION 有权
    与OXYGEN-DOPED SiC抗反射涂层的互连结构及制造方法

    公开(公告)号：US20110291284A1

    公开(公告)日：2011-12-01

    申请号：US12788912

    申请日：2010-05-27

    申请人： Dario L. Goldfarb ,  Ranee W. Kwong ,  Qinghuang Lin ,  Deborah A. Neumayer ,  Hosadurga Shobha

    发明人： Dario L. Goldfarb ,  Ranee W. Kwong ,  Qinghuang Lin ,  Deborah A. Neumayer ,  Hosadurga Shobha

    IPC分类号： H01L23/522 ,  H01L21/768

    CPC分类号： H01L21/76802 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/76808 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53271 ,  H01L23/53276 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： An interconnect structure is provided that includes at least one patterned and cured photo-patternable low k material located on a surface of a patterned and cured oxygen-doped SiC antireflective coating (ARC). A conductively filled region is located within the at least one patterned and cured photo-patternable low k material and the patterned and cured oxygen-doped SiC ARC. The oxygen-doped SiC ARC, which is a thin layer (i.e., less than 400 angstroms), does not produce standing waves that may degrade the diffusion barrier and the electrically conductive feature that are embedded within the patterned and cured photo-patternable low k dielectric material and, as such, structural integrity is maintained. Furthermore, since a thin oxygen-doped SiC ARC is employed, the plasma etch process time used to open the material stack of the ARC/dielectric cap can be reduced, thus reducing potential plasma damage to the patterned and cured photo-patternable low k material. Also, the oxygen-doped SiC ARC can withstand current BEOL processing conditions.

    摘要翻译： 提供了一种互连结构，其包括位于图案化和固化的氧掺杂的SiC抗反射涂层（ARC）的表面上的至少一个图案化和固化的可光图案化的低k材料。 导电填充区域位于至少一个图案化和固化的可光图案化低k材料和图案化和固化的氧掺杂SiC ARC内。 作为薄层（即，小于400埃）的氧掺杂SiC ARC不产生可能降解扩散阻挡层和嵌入图案化和固化的可光图案化低k内的导电特征的驻波 介电材料，因此，维持结构完整性。 此外，由于采用薄氧掺杂SiC ARC，因此可以减少用于打开ARC /电介质盖的材料堆叠的等离子体蚀刻工艺时间，从而减少图案化和固化的可光图案化低k材料的潜在等离子体损伤 。 此外，氧掺杂的SiC ARC可以承受当前的BEOL加工条件。

    Methods for photo-patternable low-k (PPLK) integration with curing after pattern transfer
    8.
    发明授权
    Methods for photo-patternable low-k (PPLK) integration with curing after pattern transfer 有权
    图案转移后光固化低k（PPLK）整合方法

    公开(公告)号：US08637395B2

    公开(公告)日：2014-01-28

    申请号：US12619298

    申请日：2009-11-16

    申请人： Maxime Darnon ,  Qinghuang Lin

    发明人： Maxime Darnon ,  Qinghuang Lin

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76804 ,  C08G77/04 ,  H01L21/02126 ,  H01L21/02318 ,  H01L21/31 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： A single damascene or dual damascene interconnect structure fabricated with a photo-patternable low-k dielectric (PPLK) which is cured after etching. This method prevents the PPLK damage and the tapering of the edges of the interconnect structure. In one embodiment, the method of the present invention includes depositing a photo-patternable low-k (PPLK) material atop a substrate. The at least one PPLK material is patterned, creating a single damascene structure. For dual damascene structures, a second PPLK layer is coated and patterned. An etch process is performed to transfer the pattern from the PPLK material into at least a portion of the substrate. A diffusion liner and a conductive material can be deposited after the etch process. The resulting structure is cured anytime after etching in order to transform the resist like PPLK into a permanent low-k material that remains within the structure.

    摘要翻译： 用蚀刻后固化的光可图案化低k电介质（PPLK）制造的单镶嵌或双镶嵌互连结构。 该方法防止了PPLK损坏和互连结构边缘的逐渐变细。 在一个实施例中，本发明的方法包括在衬底顶部沉积可光可编码的低k（PPLK）材料。 至少一个PPLK材料被图案化，形成单个镶嵌结构。 对于双镶嵌结构，涂覆和图案化第二PPLK层。 执行蚀刻工艺以将图案从PPLK材料转移到衬底的至少一部分中。 在蚀刻工艺之后可以沉积扩散衬垫和导电材料。 所得到的结构在蚀刻后随时固化，以将抗蚀剂像PPLK转变成保持在结构内的永久低k材料。

    Airgap-containing interconnect structure with patternable low-k material and method of fabricating
    10.
    发明授权
    Airgap-containing interconnect structure with patternable low-k material and method of fabricating 失效
    具有可图案化低k材料的含气隙互连结构和制造方法

    公开(公告)号：US08476758B2

    公开(公告)日：2013-07-02

    申请号：US11971470

    申请日：2008-01-09

    申请人： Qinghuang Lin

    发明人： Qinghuang Lin

    IPC分类号： H01L23/52

    CPC分类号： H01L23/532 ,  H01L21/76808 ,  H01L21/7682 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： The present invention provides a method of fabricating an airgap-containing interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene airgap-containing low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating.

    摘要翻译： 本发明提供一种制造含气隙的互连结构的方法，其中可图案化的低k材料代替了使用单独的光致抗蚀剂和电介质材料的需要。 具体而言，本发明涉及一种制备具有至少一个可图案化的低k电介质和至少一种无机抗反射涂层的单镶嵌和双镶嵌气隙低k互连结构的简化方法。