Invention Application
- Patent Title: Method of Fabricating an Integrated Device
- Patent Title (中): 制造集成装置的方法
-
Application No.: US13648932Application Date: 2012-10-10
-
Publication No.: US20130034958A1Publication Date: 2013-02-07
- Inventor: Joshua LU , Gregory BEACH , Alexander PAYNE , James HUNTER
- Applicant: Silicon Light Machines Corporation
- Applicant Address: US CA Sunnyvale
- Assignee: SILICON LIGHT MACHINES CORPORATION
- Current Assignee: SILICON LIGHT MACHINES CORPORATION
- Current Assignee Address: US CA Sunnyvale
- Main IPC: H01L21/768
- IPC: H01L21/768

Abstract:
A method of fabricating an integrated device including a MicroElectroMechanical system (MEMS) and an associated microcircuit is provided. In one embodiment, the method comprises: forming a high temperature contact through a dielectric layer to an underlying element of a microcircuit formed adjacent to a MicroElectroMechanical System (MEMS) structure on a substrate; and depositing a layer of conducting material over the dielectric layer, and patterning the layer of conducting material to form a local interconnect (LI) for the microcircuit overlying and electrically coupled to the contact and a bottom electrode for the adjacent MEMS structure. Other embodiments are also provided.
Public/Granted literature
- US08570638B2 Method of fabricating an integrated device Public/Granted day:2013-10-29
Information query
IPC分类: