公开(公告)号：US20130034958A1

公开(公告)日：2013-02-07

申请号：US13648932

申请日：2012-10-10

Applicant: Silicon Light Machines Corporation

Inventor： Joshua LU ,  Gregory BEACH ,  Alexander PAYNE ,  James HUNTER

IPC: H01L21/768

CPC classification number: G02B26/0808 ,  B81B2201/047 ,  B81C1/00238 ,  B81C1/00246 ,  G02B26/0833

Abstract: A method of fabricating an integrated device including a MicroElectroMechanical system (MEMS) and an associated microcircuit is provided. In one embodiment, the method comprises: forming a high temperature contact through a dielectric layer to an underlying element of a microcircuit formed adjacent to a MicroElectroMechanical System (MEMS) structure on a substrate; and depositing a layer of conducting material over the dielectric layer, and patterning the layer of conducting material to form a local interconnect (LI) for the microcircuit overlying and electrically coupled to the contact and a bottom electrode for the adjacent MEMS structure. Other embodiments are also provided.

Abstract translation: 提供了一种制造包括微电子机械系统（MEMS）和相关微电路的集成装置的方法。 在一个实施例中，该方法包括：通过电介质层形成高温接触到邻近微电子机械系统（MEMS）结构的衬底上形成的微电路的下层元件; 以及在所述电介质层上沉积导电材料层，以及图案化所述导电材料层以形成用于所述微电路的局部互连（L1），所述微电路覆盖并电耦合到所述触点和所述相邻MEMS结构的底部电极。 还提供了其他实施例。