发明申请
- 专利标题： Data Storage for Voltage Domain Crossings
- 专利标题（中）： 电压域交叉口的数据存储
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申请号： US13208450申请日： 2011-08-12
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公开(公告)号： US20130039133A1公开(公告)日： 2013-02-14
- 发明人: Christopher Edward Koob , Jen Tsung Lin , Manojkumar Pyla , Martin Saint-Laurent
- 申请人： Christopher Edward Koob , Jen Tsung Lin , Manojkumar Pyla , Martin Saint-Laurent
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM INCORPORATED
- 当前专利权人： QUALCOMM INCORPORATED
- 当前专利权人地址： US CA San Diego
- 主分类号： G11C5/14
- IPC分类号： G11C5/14
摘要：
According to an embodiment, an apparatus includes a data storage device. Data to be stored in the data storage device is level shifted from a first voltage domain to a second voltage domain prior to being stored within the data storage device. The data storage device is powered by the second voltage domain. The apparatus further includes a circuit that is powered by the second voltage domain and that is responsive to data output by the data storage device.
公开/授权文献
- US08995207B2 Data storage for voltage domain crossings 公开/授权日：2015-03-31