发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
-
申请号： US13655446申请日： 2012-10-19
-
公开(公告)号： US20130043576A1公开(公告)日： 2013-02-21
- 发明人: Hiroyuki NAKAMURA , Atsushi FUJIKI , Tatsuhiro SEKI , Nobuya KOIKE , Yukihiro SATO , Kisho ASHIDA
- 申请人： Renesas Electronics Corporation
- 申请人地址： JP Kawasaki-shi
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Kawasaki-shi
- 优先权： JP2010-050806 20100308
- 主分类号： H01L23/495
- IPC分类号： H01L23/495
摘要：
To improve the performance and reliability of semiconductor devices. For the semiconductor chip CP1, power MOSFETs Q1 and Q2 for the switch, a diode DD1 for detecting the heat generation of the power MOSFET Q1, a diode DD2 for detecting the heat generation of the power MOSFET Q2, and plural pad electrodes PD are formed. The power MOSFET Q1 and the diode DD1 are arranged in a first MOSFET region RG1 on the side of a side SD1, and the power MOSFET Q2 and the diode DD2 are arranged in a second MOSFET region RG2 on the side of a side SD2. The diode DD1 is arranged along the side SD1, the diode DD2 is arranged along the side SD2, and all pad electrodes PD other than the pad electrodes PDS1 and PDS2 for the source are arranged along a side SD3 between the diodes DD1 and DD2.
公开/授权文献
- US08564112B2 Semiconductor device 公开/授权日：2013-10-22
信息查询
IPC分类:
