公开(公告)号：US20130043576A1

公开(公告)日：2013-02-21

申请号：US13655446

申请日：2012-10-19

Applicant: Renesas Electronics Corporation

Inventor： Hiroyuki NAKAMURA ,  Atsushi FUJIKI ,  Tatsuhiro SEKI ,  Nobuya KOIKE ,  Yukihiro SATO ,  Kisho ASHIDA

IPC: H01L23/495

CPC classification number: H01L27/07 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L29/66 ,  H01L2224/02166 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/40095 ,  H01L2224/40247 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/12036 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: To improve the performance and reliability of semiconductor devices. For the semiconductor chip CP1, power MOSFETs Q1 and Q2 for the switch, a diode DD1 for detecting the heat generation of the power MOSFET Q1, a diode DD2 for detecting the heat generation of the power MOSFET Q2, and plural pad electrodes PD are formed. The power MOSFET Q1 and the diode DD1 are arranged in a first MOSFET region RG1 on the side of a side SD1, and the power MOSFET Q2 and the diode DD2 are arranged in a second MOSFET region RG2 on the side of a side SD2. The diode DD1 is arranged along the side SD1, the diode DD2 is arranged along the side SD2, and all pad electrodes PD other than the pad electrodes PDS1 and PDS2 for the source are arranged along a side SD3 between the diodes DD1 and DD2.

Abstract translation: 提高半导体器件的性能和可靠性。 对于半导体芯片CP1，用于开关的功率MOSFET Q1和Q2，用于检测功率MOSFET Q1的发热的二极管DD1，用于检测功率MOSFET Q2的发热的二极管DD2和多个焊盘电极PD 。 功率MOSFET Q1和二极管DD1布置在侧面SD1侧的第一MOSFET区域RG1中，功率MOSFET Q2和二极管DD2布置在侧面SD2侧的第二MOSFET区RG2中。 二极管DD1沿着侧面SD1配置，二极管DD2沿着侧面SD2配置，除了用于源极的焊盘电极PDS1和PDS2以外的所有焊盘电极PD沿着二极管DD1和DD2之间的侧面SD3排列。