发明申请
- 专利标题: PATTERNING PROCESS AND RESIST COMPOSITION
- 专利标题(中): 绘图工艺和耐腐蚀组合物
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申请号: US13586186申请日: 2012-08-15
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公开(公告)号: US20130052587A1公开(公告)日: 2013-02-28
- 发明人: Jun Hatakeyama , Kazuhiro Katayama , Tomohiro Kobayashi
- 申请人: Jun Hatakeyama , Kazuhiro Katayama , Tomohiro Kobayashi
- 申请人地址: JP Tokyo
- 专利权人: SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人: SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2011-184706 20110826
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; G03F7/027 ; G03F7/004
摘要:
A negative pattern is formed by coating a resist composition comprising a methylol-substituted urea, amide or urethane compound, a polymer comprising recurring units having an acid labile group-substituted hydroxyl group, and an acid generator onto a substrate, prebaking, exposing to high-energy radiation, and developing in an organic solvent developer such that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. In image formation via positive/negative reversal by organic solvent development, the resist film is characterized by a high dissolution contrast between the unexposed and exposed regions.
公开/授权文献
- US08790866B2 Patterning process and resist composition 公开/授权日:2014-07-29